SKKT 107/16 E Absolute Maximum Ratings Symbol Conditions Values Unit Chip I T =85C 119 A T(AV) c sinus 180 T =100 C 91 A c I T =25C 2250 A TSM j 10 ms T =130 C 1900 A j 2 i t T =25C 25313 As j 10 ms T =130 C 18050 As j V 1700 V SEMIPACK 1 RSM V 1600 V RRM V 1600 V DRM Thyristor Modules (di/dt) T = 130 C 140 A/s cr j (dv/dt) T = 130 C 1000 V/s cr j T -40 ... 130 C j SKKT 107/16 E Module T -40 ... 125 C stg V 1min 3000 V Features isol a.c. 50 Hz r.m.s. 1s 3600 V Heat transfer through aluminium oxide ceramic isolated metal baseplate UL recognized, file no. E63532 Characteristics Typical Applications* Symbol Conditions min. typ. max. Unit DC motor control (e. g. for machine Chip tools) V T =25C, I = 300 A 1.6 1.75 V j T T AC motor soft starters V T = 130 C 0.8 0.9 V j T(TO) Temperature control (e. g. for ovens, chemical processes) r T = 130 C 2.80 3.35 m j T Professional light dimming (studios, I I T =130 C, V = V V = V 20 mA DD RD j DD DRM RD RRM theaters) t T =25C, I =1 A, di /dt = 1 A/s 1s j G G gd t V = 0.67 * V 2s gr D DRM t T = 130 C 200 s j q I T =25C 150 250 mA j H I T =25C, R =33 300 600 mA j G L V T =25C, d.c. 2.5 V j GT I T =25C, d.c. 100 mA j GT V T = 130 C, d.c. 0.25 V j GD I T = 130 C, d.c. 4mA j GD R per chip 0.190 K/W th(j-c) continuous DC per module 0.095 K/W R per chip 0.200 K/W th(j-c) sin. 180 per module 0.100 K/W R per chip 0.210 K/W th(j-c) rec. 120 per module 0.105 K/W Module R chip 0.22 K/W th(c-s) module 0.11 K/W M to heatsink M5 4.25 5.75 Nm s M to terminals M5 2.55 3.45 Nm t a 5 * 9,81 m/s w75g SKKT by SEMIKRON Rev. 1 23.12.2011 1SKKT 107/16 E Fig. 1L: Power dissipation per thyristor/diode vs. on-state Fig. 1R: Max. power dissipation per chip vs. ambient current temperature Fig. 2L: Max. power dissipation of one module vs. rms Fig. 2R: Max. power dissipation of one module vs. case current temperature Fig. 3L: Max. power dissipation of two modules vs. direct Fig. 3R: Max. power dissipation of two modules vs. case current temperature 2 Rev. 1 23.12.2011 by SEMIKRON