X-On Electronics has gained recognition as a prominent supplier of TT122N22KOF? Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. TT122N22KOF? Discrete Semiconductor Modules are a product manufactured by Infineon. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

TT122N22KOF? Infineon

TT122N22KOF? electronic component of Infineon
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Part No.TT122N22KOF?
Manufacturer: Infineon
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 2200V 220A DUAL
Datasheet: TT122N22KOF? Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 173.754 ea
Line Total: USD 173.75 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 173.754
8 : USD 167.1298

   
Manufacturer
Product Category
Category
Max. Forward Voltage
Semiconductor Structure
Gate Current
Max. Off-State Voltage
Mechanical Mounting
Case
Type Of Module
Electrical Mounting
Max. Forward Impulse Current
Load Current
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We are delighted to provide the TT122N22KOF? from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TT122N22KOF? and other electronic components in the Discrete Semiconductor Modules category and beyond.

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Datenblatt / Data sheet N Netz-Thyristor-Modul TT122N Phase Control Thyristor Module TT122N TT122N...K..-A TD122N Kenndaten Elektrische Eigenschaften / Electrical properties Elektrische Eigenschaften Hchstzulssige Werte / Maximum rated values 1800 2000 V Periodische Vorwrts- und Rckwrts-Spitzensperrspannung T = -40C... T V ,V vj vj max DRM RRM (1) 2200 2400 V repetitive peak forward off-state and reverse voltages 1800 2000 V Vorwrts-Stospitzensperrspannung T = -40C... T V vj vj max DSM 2200 2400 V non-repetitive peak forward off-state voltage 1900 2100 V Rckwrts-Stospitzensperrspannung T = +25C... T V vj vj max RSM 2300 2500 V non-repetitive peak reverse voltage 220 A Durchlastrom-Grenzeffektivwert I TRMSM maximum RMS on-state current 122 A Dauergrenzstrom T = 85 C I C TAVM 140 A average on-state current T = 76C C 3300 A Stostrom-Grenzwert T = 25 C, t = 10 ms I vj P TSM 2950 A surge current T = T , t = 10 ms vj vj max P 54450 As Grenzlastintegral T = 25 C, t = 10 ms It vj P 43500 As It-value T = T , t = 10 ms vj vj max P DIN IEC 747-6 f = 50 Hz, 100 A/s Kritische Stromsteilheit (di /dt) T cr i = 1 A, di /dt = 1 A/s GM G critical rate of rise of on-state current Kritische Spannungssteilheit T = T , v = 0,67 V (dv /dt) vj vj max D DRM D cr th 500 V/s critical rate of rise of off-state voltage 6.Kennbuchstabe / 6 letter C th 1000 V/s 6.Kennbuchstabe / 6 letter F Charakteristische Werte / Characteristic values Durchlaspannung T = T , i = 400 A v max. 1,95 V vj vj max T T on-state voltage Schleusenspannung T = T V 1,00 V vj vj max (TO) threshold voltage Ersatzwiderstand T = T r 2,15 m vj vj max T slope resistance Zndstrom T = 25C, v = 6 V I max. 200 mA vj D GT gate trigger current Zndspannung T = 25C, v = 6 V V max. 2V vj D GT gate trigger voltage Nicht zndender Steuerstrom T = T , v = 6 V I max. 10 mA vj vj max D GD max. gate non-trigger current T = T , v = 0,5 V 5 mA vj vj max D DRM Nicht zndende Steuerspannung T = T , v = 0,5 V V max. 0,25 V vj vj max D DRM GD gate non-trigger voltage Haltestrom T = 25C, v = 6 V, R = 5 I max. 300 mA vj D A H holding current Einraststrom T = 25C, v = 6 V, R 10 I max. 1200 mA vj D GK L latching current i = 1 A, di /dt = 1 A/s, t = 20 s GM G g Vorwrts- und Rckwrts-Sperrstrom T = T i , i max. 30 mA vj vj max D R forward off-state and reverse current v = V , v = V D DRM R RRM Zndverzug DIN IEC 747-6 T = 25 C, t max. 4 s vj gd gate controlled delay time i = 1 A, di /dt = 1 A/s GM G (1) 2400V auf Anfrage/ 2400V on request prepared by: C.Drilling date of publication: 01.07.02 approved by: J. Novotny Revision: 1 A70 / 94 BIP AC / MA2-BE / 22 Nov , A.Rther Seite/page 1/12Datenblatt / Data sheet N Netz-Thyristor-Modul TT122N Phase Control Thyristor Module Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit T = T , i = I t vj vj max TM TAVM q circuit commutated turn-off time v = 100 V, v = 0,67 V RM DM DRM dv /dt = 20 V/s, -di /dt = 10 A/s D T th 5.Kennbuchstabe / 5 letter O typ. 300 s Isolations-Prfspannung RMS, f = 50 Hz, t = 1 min V 2,5 kV ISOL insulation test voltage RMS, f = 50 Hz, t = 1 sec kV 3,0 Thermische Eigenschaften / Thermal properties Thermische Eigenschaften pro Modul / per Module, = 180 sin R max. 0,100 C/W Innerer Wrmewiderstand thJC pro Zweig / per arm, = 180 sin max. 0,200 C/W thermal resistance, junction to case pro Modul / per Module, DC max. 0,096 C/W pro Zweig / per arm, DC max. 0,192 C/W pro Modul / per Module max. 0,03 C/W bergangs-Wrmewiderstand R thCH max. 0,06 pro Zweig / per arm C/W thermal resistance, case to heatsink 125 C Hchstzulssige Sperrschichttemperatur T vj max maximum junction temperature Betriebstemperatur T -40...+125 C c op operating temperature Lagertemperatur T -40...+130 C stg storage temperature Mechanische Eigenschaften / Mechanical properties Mechanische Eigenschaften Gehuse, siehe Anlage Seite 3 case, see annex page 3 Si-Element mit Druckkontakt Si-pellet with pressure contact Innere Isolation AlN internal insulation Anzugsdrehmoment fr mechanische Anschlsse Toleranz / Tolerance 15% M1 6 Nm mounting torque Anzugsdrehmoment fr elektrische Anschlsse Toleranz / Tolerance 10% M2 6 Nm terminal connection torque Steueranschlsse DIN 46 244 A 2,8 x 0,8 control terminals Gewicht G typ. 310 g weight Kriechstrecke 15 mm creepage distance Schwingfestigkeit f = 50 Hz 50 m/s vibration resistance file-No. E 83336 Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Es gilt in Verbindung mit den zugehrigen technischen Erluterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. A70 / 94 BIP AC / MA2-BE / 22 Nov , A.Rther Seite/page 2/12

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION
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