SKM300GAL12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1200 V CES j I T =25C 422 A C c T = 175 C j T =80C 324 A c I 300 A Cnom I I = 3xI 900 A CRM CRM Cnom V -20 ... 20 V GES V = 800 V CC SEMITRANS 3 t V 15 V T =150 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j IGBT4 Modules Inverse diode I T =25C 353 A F c T = 175 C j SKM300GAL12E4 T =80C 264 A c I 300 A Fnom I I = 3xI 900 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 1548 A FSM p j IGBT4 = 4. generation medium fast T -40 ... 175 C j trench IGBT (Infineon) Freewheeling diode CAL4 = Soft switching 4. generation CAL-diode I T =25C 353 A c F T = 175 C j Isolated copper baseplate using DBC T =80C 264 A c technology (Direct Bonded Copper) I 300 A Fnom Increased power cycling capability I I = 3xI 900 A With integrated gate resistor FRM FRM Fnom For higher switching frequenzies up to I t = 10 ms, sin 180, T =25C 1548 A p j FSM 12kHz T -40 ... 175 C j UL recognized, file no. E63532 Module Typical Applications* I T =80 C 500 A t(RMS) terminal DC/DC converter T -40 ... 125 C stg Brake chopper V AC sinus 50 Hz, t = 1 min 4000 V isol Switched reluctance motor Remarks Characteristics Case temperature limited Symbol Conditions min. typ. max. Unit to T = 125C max. c IGBT Recommended T = -40 ... +150C op I =300A Product reliability results valid V C T =25C 1.85 2.10 V CE(sat) j V =15V for T = 150C GE j T =150 C 2.25 2.45 V j chiplevel V T =25C 0.8 0.9 V j CE0 chiplevel T =150 C 0.7 0.8 V j r T =25C 3.50 4.00 m V =15V j CE GE chiplevel T =150 C 5.17 5.50 m j V V =V , I =12 mA 5 5.8 6.5 V GE(th) GE CE C I T =25C 4.0 mA V =0V j CES GE V = 1200 V CE T =150 C mA j C f=1MHz 17.6 nF ies V =25V CE C f=1MHz 1.16 nF oes V =0V GE C f=1MHz 0.94 nF res Q V = - 8 V...+ 15 V 1700 nC GE G R T =25C 2.5 j Gint GAL by SEMIKRON Rev. 3 21.08.2013 1SKM300GAL12E4 Characteristics Symbol Conditions min. typ. max. Unit V = 600 V t CC T =150 C 220 ns j d(on) I =300A C t T =150 C 44 ns j r V =15V GE E T =150 C 27 mJ j on R =1.5 G on t T =150 C 520 ns j d(off) R =1.5 G off di/dt = 6100 A/s t T =150 C 117 ns on j f di/dt =3000A/s off E T =150 C 39 mJ j off R per IGBT 0.11 K/W th(j-c) SEMITRANS 3 Inverse diode I = 300 A V = V F T =25C 2.17 2.49 V F EC j V =0V GE T =150 C IGBT4 Modules 2.11 2.42 V j chiplevel V T =25C 1.3 1.5 V j F0 chiplevel T =150 C 0.9 1.1 V j SKM300GAL12E4 r T =25C 2.9 3.3 m j F chiplevel T =150 C 4.0 4.4 m j I = 300 A I F T =150 C 345 A j RRM Features di/dt =7300A/s off Q T =150 C 54 C j rr IGBT4 = 4. generation medium fast V =15V GE trench IGBT (Infineon) E T =150 C 23 mJ rr j V = 600 V CC CAL4 = Soft switching 4. generation R per diode 0.17 K/W th(j-c) CAL-diode Freewheeling diode Isolated copper baseplate using DBC I = 300 A technology (Direct Bonded Copper) V = V F T =25C 2.17 2.49 V F EC j V =0V Increased power cycling capability GE T =150 C 2.11 2.42 V j chiplevel With integrated gate resistor For higher switching frequenzies up to V T =25C 1.3 1.5 V j F0 chiplevel 12kHz T =150 C 0.9 1.1 V j UL recognized, file no. E63532 r T =25C 2.9 3.3 m j F chiplevel Typical Applications* T =150 C 4.0 4.4 m j DC/DC converter I = 300 A I F T =150 C 345 A j RRM di/dt =7300A/s Brake chopper off Q T =150 C 54 C j rr Switched reluctance motor V =15V GE E T =150 C 23 mJ rr j V = 600 V CC Remarks R per Diode 0.17 K/W th(j-c) Case temperature limited Module to T = 125C max. c L 15 20 nH CE Recommended T = -40 ... +150C op Product reliability results valid R T =25C 0.25 m CC +EE C terminal-chip for T = 150C j T =125C 0.5 m C R per module 0.02 0.038 K/W th(c-s) M to heat sink M6 3 5 Nm s M to terminals M6 2.5 5 Nm t Nm w 325 g GAL 2 Rev. 3 21.08.2013 by SEMIKRON