G P 3 D 00 5 A 17 0B VDC 1700 V Q 52 nC C I 5 A F 1700V SiC Schottky Diode T ,max 175 C j T M Package A mp + Features Unipolar rectifier with surge current Zero reverse recovery current Fast, temperature-independent switching Avalanche tested to 145mJ* T M A mp + Benefits Near zero switching loss Higher efficiency Smaller heat sink Easy to parallel Part Package Marking GP3D005A170B TO-247-2L 3D005A170 T M A mp + Applications Switch mode power supplies, UPS DC/DC Converters Solar Inverters EV charging stations Maximum Ratings, at T =25 C, unless otherwise specified j Characteristics Symbol Conditions Values Unit T =25 C, T=175 C 21 C j I ** T =125 C, T=175 C Continuous forward current 11 A F C j T =150 C, T=175 C 7 C j T =25 C, t =8.3 ms 75 C p Surge non-repetitive forward current I A FSM sine halfwave T =110 C, t =8.3 ms 60 C p Non-repetitive peak forward current I T =25 C, t =10 s 440 A C p F,max T =25 C, t =8.3 ms 23 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 15 C p Repetitive peak reverse voltage V T=25 C 1700 V RRM j Turn-on slew rate, Diode dv/dt ruggedness 200 V/ns dv/dt repetitive Power dissipation T =25 C 140 W P ** tot C Operating junction & storage T, T Continuous -55175 C j storage temperature Soldering temperature T Wave soldering leads 260 C solder Mounting torque M3 Screw 1 N-m Notes: * EAS of 145 mJ is based on starting Tj = 25C, L = 1.0 mH, IAS = 17.03 A, V = 50 V. ** Typical Rth used JC Rev. 1, 2/19/2020 www.SemiQ.com p.1TM 1700V SiC Schottky Diode A m p + G P 3 D 00 5 A 17 0B Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. T=25 C DC blocking voltage V 1700 - - V j DC I =5A, T=25 C - 1.50 1.65 F j Diode forward voltage V I =5A, T=125 C - 1.96 - V F F j I =5A, T=175 C - 2.33 2.55 F j V =1,700V, T=25 C - 1 20 R j Reverse current I V =1,700V, T=125 C - 6 - mA R R j V =1,700V, T=175 C - 23 200 R j Total capacitive charge Q V =1700V, T=25 C - 52 - nC C R j V =1V, f=1 MHz - 347 - R Total capacitance C V =800V, f=1 MHz - 23 - pF R V =1700V, f=1 MHz - 22 - R Thermal Characteristics Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R - - 1.07 1.35 C/W thJC Typical Performance 10 1.E-04 -55C -55C 9 25C 25C 8 75C 75C 1.E-05 125C 125C 7 175C 175C 6 5 1.E-06 4 3 1.E-07 2 1 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 200 700 1,200 1,700 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T) Fig. 2 Reverse Characteristics (parameterized on T) j j Rev. 1, 2/19/2020 www.SemiQ.com p.2 I (A) F I (A) R