G P 3 D 00 8 A 06 5A VDC 650 V Q 21 nC C I 8 A F 650V SiC Schottky Diode T ,max 175 C j T M Package A mp + Features Unipolar rectifier with surge current Zero reverse recovery current Fast, temperature-independent switching Avalanche tested to 54mJ* T M A mp + Benefits Near zero switching loss Higher efficiency Smaller heat sink Easy to parallel Part Package Marking GP3D008A065A 3D008A065 TO-220-2L T M A mp + Applications Switch mode power supplies, UPS Power factor correction Output rectification General Purpose Maximum Ratings, at T =25 C, unless otherwise specified j Characteristics Symbol Conditions Values Unit T =25 C, T=175 C 27 C j I T =125 C, T=175 C Continuous forward current 14 A F** C j T =150 C, T=175 C 9 C j T =25 C, t =8.3 ms 70 Surge non-repetitive forward current C p I A FSM sine halfwave T =110 C, t =8.3 ms 60 C p T =25 C, t =10 s Non-repetitive peak forward current I 580 A C p F,max T =25 C, t =8.3 ms 20 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 15 C p Repetitive peak reverse voltage V T=25 C 650 V j RRM Turn-on slew rate, Diode dv/dt ruggedness dv/dt 200 V/ns repetitive Power dissipation P T =25 C 102 W tot** C Operating junction & storage T, T Continuous -55175 C j storage temperature Soldering temperature Wave soldering leads 260 C T solder Mounting torque M3 Screw 1 N-m Notes: * EAS of 54 mJ is based on starting Tj = 25C, L = 1.0 mH, IAS = 10.39 A, V = 50 V. ** Typical Rth used JC Rev. 1, 4/30/2020 www.SemiQ.com p.1TM 650V SiC Schottky Diode A m p + G P 3 D 00 8 A 06 5A Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. T=25 C DC blocking voltage V 650 - - V j DC I =8A, T=25 C - 1.45 1.60 F j Diode forward voltage V I =8A, T=125 C - 1.57 - V F F j I =8A, T=175 C - 1.69 2.20 F j V =650V, T=25 C - 1 20 R j Reverse current I V =650V, T=125 C - 8 - mA R R j V =650V, T=175 C - 31 200 R j Total capacitive charge Q V =400V, T=25 C - 21 - nC C R j V =1V, f=1 MHz - 336 - R Total capacitance C V =200V, f=1 MHz - 41 - pF R V =400V, f=1 MHz - 34 - R Thermal Characteristics Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R - - 1.48 1.82 C/W thJC Typical Performance 16 1.E-03 -55C -55C 25C 25C 1.E-04 75C 75C 12 125C 125C 175C 175C 1.E-05 8 1.E-06 4 1.E-07 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T) Fig. 2 Reverse Characteristics (parameterized on T) j j Rev. 1, 4/30/2020 www.SemiQ.com p.2 I (A) F I (A) R