X-On Electronics has gained recognition as a prominent supplier of GP3D010A120A Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. GP3D010A120A Schottky Diodes & Rectifiers are a product manufactured by SemiQ. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

GP3D010A120A SemiQ

GP3D010A120A electronic component of SemiQ
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See Product Specifications
Part No.GP3D010A120A
Manufacturer: SemiQ
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SiC Schottky Diode 10A 1200V TO-220
Datasheet: GP3D010A120A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.499 ea
Line Total: USD 4.5 
Availability - 64
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
64
Ship by Fri. 27 Dec to Tue. 31 Dec
MOQ : 1
Multiples : 1
1 : USD 4.499
10 : USD 4.367
100 : USD 2.783
500 : USD 2.442
1000 : USD 2.332

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif
 
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We are delighted to provide the GP3D010A120A from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GP3D010A120A and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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G P 3 D 01 0 A 12 0A VDC 1200 V Q 56 nC C I 10 A F 1200V SiC Schottky Diode T ,max 175 C j T M Package A mp + Features Unipolar rectifier with surge current Zero reverse recovery current Fast, temperature-independent switching Avalanche tested to 125mJ* All parts tested to greater than 1,400V T M A mp + Benefits Near zero switching loss Higher efficiency Smaller heat sink Easy to parallel Part Package Marking GP3D010A120A 3D010A120 TO-220-2L T M A mp + Applications Solar Inverters Switch mode power supplies, UPS Power factor correction EV charging stations Maximum Ratings, at T =25 C, unless otherwise specified j Characteristics Symbol Conditions Values Unit T =25 C, T=175 C 33 C j Continuous forward current I T =125 C, T=175 C 18 A F** C j T =150 C, T=175 C 12 C j T =25 C, t =8.3 ms 120 Surge non-repetitive forward current C p I A FSM sine halfwave T =110 C, t =8.3 ms 110 C p Non-repetitive peak forward current I T =25 C, t =10 s 700 A F,max C p T =25 C, t =8.3 ms 60 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 50 C p Repetitive peak reverse voltage V T=25 C 1200 V RRM j Turn-on slew rate, 200 V/ns Diode dv/dt ruggedness dv/dt repetitive T =25 C Power dissipation P 174 W C tot** Operating junction & storage T, T Continuous -55175 C j storage temperature Soldering temperature T Wave soldering leads 260 C solder Mounting torque M3 Screw 1 N-m Notes: * EAS of 125 mJ is based on starting Tj = 25C, L = 1.0 mH, IAS = 15.81 A, V = 50 V. ** Typical Rth used JC Rev. 1.1, 4/17/2020 www.SemiQ.com p.1TM 1200V SiC Schottky Diode A m p + G P 3 D 01 0 A 12 0A Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. T=25 C DC blocking voltage V 1200 - - V j DC I =1.00mA, T=25 C Breakdown voltage V 1400 - - V R j BR I =10A, T=25 C - 1.50 1.65 F j Diode forward voltage V I =10A, T=125 C - 1.83 - V F F j I =10A, T=175 C - 2.11 2.70 F j V =1,200V, T=25 C - 2 20 R j V =1,400V, T=25 C - 7 - R j Reverse current I R mA V =1,200V, T=125 C - 11 - R j V =1,200V, T=175 C - 39 300 R j Total capacitive charge Q V =800V, T=25 C - 56 - nC C R j V =1V, f=1 MHz - 608 - R Total capacitance C V =400V, f=1 MHz - 53 - pF R V =800V, f=1 MHz - 39 - R Thermal Characteristics Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R - - 0.86 1.11 C/W thJC Typical Performance 20 1.E-03 -55C -55C 18 25C 25C 16 1.E-04 75C 75C 125C 14 125C 175C 175C 12 1.E-05 10 8 1.E-06 6 4 1.E-07 2 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 200 400 600 800 1,000 1,200 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T) Fig. 2 Reverse Characteristics (parameterized on T) j j Rev. 1.1, 4/17/2020 www.SemiQ.com p.2 I (A) F I (A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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