PF8/PF0 Axial Leaded Hermetically Sealed Fast Rectifier Diode POWER DISCRETES Features Description Quick reference data Low reverse recovery time Glass passivated for hermetic sealing V = 800 & 1000V R Low switching losses I 1.8A F = Soft, non-snap off, recovery characteristic t = 300nS rr Avalanche capability I = 1A R Absolute Maximum Ratings Electrical specifications T = 25C unless otherwise specified. A S8ymbol P0F PsF Unit WVorking Reverse Voltage 8000 1V00 RWM RVepetitive Reverse Voltage 8000 1V00 RRM SVurge Reverse Voltage 9000 1V10 RSM Average Forward Current 55C, I 1A.8 F(AV) lead length0.375 Non-Repetitive Surge Current I 5A0 FSM (tp = 8.3mS V & T ) R JMAX STtorage Temperature Range -C55 to +175 STG Revision: August 8, 2007 1 www.semtech.comPF8/PF0 POWER DISCRETES Electrical Specifications Electrical specifications T = 25C unless otherwise specified. A S0ymbol PsF8/PF Unit Average Forward Currentmax. I 0A.85 F(AV) (pcb mounted) Average Forward Currentmax. I 1A.8 F(AV) L = 10mm Forward Voltage Drop max. V 1V.35 F I=C1.5A, Tj= 25 F Reverse Currentmax. V,CTj= 25 I 1 A RWM R V,CTj= 100 I 15 RWM R Reverse RecoveryTime max. t0rr 3S0 n 0.5A I to 1.0A I recovers to 0.25mA I F RM RM(REC) JunctionCapacitance typ. C8j 1Fp V = 5V, f= 1MHz R Thermal Characteristics S0ymbol PsF8/PF Unit ThermalResistance-Junctionto Lead Lead length= 0 R 19 C/W JL Lead length= 0.375 47 www.semtech.com 2007 Semtech Corp. 2