RClamp3346P Low Capacitance RClamp 6-Line ESD Protection PROTECTION PRODUCTS Description Features ESD protection for high-speed data lines to The RClamp3346P provides ESD protection for IEC 61000-4-2 (ESD) +/-17kV (Contact), +/- 20 kV (Air) highspeed data interfaces. It features a high maximum IEC 61000-4-5 (Lightning) 5A (8/20 s) ESD withstand voltage of 17kV contact and 20kV IEC 61000-4-4 (EFT) 40A (5/50ns) air discharge per IEC 61000-4-2. RClamp3346P is Package design optimized for high speed lines designed to minimize both the ESD peak clamping and Flow-Through design Protects six high-speed lines the TLP clamping. Package inductance is reduced at Low capacitance: 0.65pF Maximum (I/O to Ground) each pin resulting in lower peak ESD clamping voltage. Low ESD clamping voltage The dynamic resistance is among the industrys lowest Low dynamic resistance: 0.15 Ohms (Typical) at 0.15 Ohms (typical). Maximum capacitance on each Solid-state silicon-avalanche technology line to ground is 0.65pF allowing the RClamp3346P to be used in applications operating in excess of 5GHz Mechanical Characteristics without signal attenuation. Each device will protect up to six lines (three high-speed pairs). SGP2708N7 7-pin package (2.7 x 0.8 x 0.50mm) Pb-Free, Halogen Free, RoHS/WEEE compliant The RClamp3346P is in a 7-pin SGP2708N7 package Lead Pitch: 0.4mm (intra-pair) Lead Finish: NiPdAu measuring 2.7 x 0.8mm with a nominal height of Marking: Marking code 0.50mm. The leads have a nominal pin-to-pin pitch of Packaging: Tape and Reel 0.40mm. Flow- through package design simplifies PCB layout and maintains signal integrity on high-speed lines. Applications The combination of low peak ESD clamping, low USB 3.0 dynamic resistance, and innovative package design eSATA enables this device to provide the highest level of ESD Display Port protection for applications such as USB 3.0, eSATA, and LVDS DisplayPort. Package Dimension Schematic & Pin Configuration 0.80 BSC 0.40 BSC 0.80 1 3 4 5 6 7 2.70 2 0.50 6-Line protection RClamp3346P 1 of 9 www.semtech.com Final Datasheet Rev 5.0 Semtech Revision date 10/5/2016Absolute Maximum Rating Rating Symbol Value Units Peak Pulse Current (t = 8/20s) I 4.5 A p PP (1) ESD per IEC 61000-4-2 (Air) 20 V kV (1) ESD ESD per IEC 61000-4-2 (Contact) 17 O Operating Temperature T -40 to +125 C J O Storage Temperature T -55 to +150 C STG O Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse Stand-Off Voltage V Any I/O to GND 3.3 V RWM Reverse Breakdown Voltage V I = 10A 7 8 9 V BR BR O T = 25 C 0.01 0.05 V = 3.3V RWM Reverse Leakage Current I A R O Any I/O to GND T = 125 C 0.150 I = 1A 2.5 3.5 PP tp = 8/20s Clamping Voltage V V C Any I/O to GND I = 4.5A 3.5 4.5 PP I = 16A 5.5 PP 2 ESD Clamping Voltage V tp = 0.2/100ns V C I = -16A -3 PP 2,3 Dynamic Resistance (positive) R tp = 0.2/100ns 0.15 DYN 2,3 Dynamic Resistance (negative) R tp = 0.2/100ns 0.14 DYN V = 0V, f = 1MHz, Any I/O to GND 0.60 0.65 R Junction Capacitance C pF J V = 0V, f = 1MHz, Between I/O pins 0.30 0.40 R Notes 1) Measured with a 20dB attenuator, 50 Ohm scope input impedance, 2GHz bandwidth. ESD gun return path connected to ESD ground plane. 2) Transmission Line Pulse Test (TLP) Settings: tp = 100ns, tr = 0.2ns, I and V averaging window: t1 = 70ns to t2 = 90ns. TLP TLP 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP RClamp3346P 2 of 9 www.semtech.com Final Datasheet Rev 5.0 Semtech Revision Date 10/5/2016