TClamp2472S
Low Capacitance TransClamp
Surge Protection for xDSL Interfaces
PROTECTION PRODUCTS
Description Features
Transient Protec tion to
TClamp2472S is specifically designed to provide
IEC 61000-4-2 (ESD) Level 4
secondar y surge and ESD protec tion for Class-H VDSL2
IEC 61000-4-4 (EFT ) 2kV (5/50ns)
line dr ivers. TClamp2472S integrates low capacitance,
IEC 61000-4-5 (Lightning) 20A (8/20s)
surge -rated steer ing diodes with a high power transient
Bias diodes prevent charging of T VS capacitance
voltage suppressor ( T VS). The T VS utilizes snap -back
Wor k ing Voltage: 24V
or crow-bar technology to minimize device clamping Low Capacitance: 3.5pF M aximum
Capacitance var iation <1.5pF (1V to 24V )
voltage and features high surge cur rent capabilit y of 20A
S olid-State Silicon-Avalanche Technology
(tp=8/20us).
Mechanical Characteristics
TClamp2472S capacitance is limited to 3.5pF maximum
JEDEC SOT-23 6L pack age
with a t ypical capacitance var iation of 0.10pF over the
Pb -Free, Halogen Free, R oHS/WEEE Compliant
operating voltage range. This ensures cor rec t signal
Lead Finish: matte Tin
transmission on VDSL lines. The biased br idge struc ture
M olding Compound Flammabilit y R ating: UL 94V-0
allows the device to be used in VDSL2 applications that
M ar k ing : M ar k ing Code + Date Code
utilize asymetr ical Class-H line dr ivers with operating
Pack aging : Tape and R eel
voltages up to 24Vp -p.
Applications
TClamp2472S is in a 6-pin SOT-23 pack age. The leads
ADSLx / VDSLx S econdar y Protec tion
are finished with lead-free matte tin. The flow- through
VDSL2 Class-H Line Dr iver S econdar y Protec tion
M odems
pack age design simplifies PCB layout.
Access Equipment
Central O ffice Equipment
Customer Premise Equipment
Circuit Diagram Pin Configuration
5
6
Line 1A 1
5
- Bias 2 + Bias
1 3
4
Line 1B 3
2
TClamp2472S Page 1
www.semtech.com
Final Datasheet Rev 2.1 Semtech
November 18, 2015Absolute Maximum Ratings
Rating Symbol Value Units
Peak Pulse Power (tp = 1.2/50s) P 150 W
PK
Peak Pulse Cur rent (tp = 1.2/50s) I 20 A
PP
(1), (3)
ESD per IEC 61000-4-2 (Contac t) V 8 kV
ESD
O
Operating Temperature T -40 to +85 C
J
O
Storage Temperature T -55 to +150 C
STG
O
Electrical Characteristics (T=25 C unless otherwise specified)
Parameter Symbol Conditions Min. Typ. Max. Units
O O
-40 C to 85 C
R everse Stand- O ff Voltage V 24 V
R WM
Pin 1 to Pin 2, Pin 3 to Pin 2, Pin 1 to Pin 3
O O
I = 10mA, T = -40 C to 85 C
BR
R everse Breakdown Voltage V 27 31 35 V
BR
Pin 1 to Pin 3
O
T = 25 C 0.01 0.100 A
R everse Leak age Cur rent I V = 24V
R R WM
O
T = 85 C 0.02 0.100 A
(3)
Holding Cur rent I 50 200 mA
H
I = 10A, tp = 1.2/50s, 8/20s
PP
Combination Wavefor m 6 V
Pin 1 to Pin 3
(2), (3)
Clamping Voltage V
C
I = 20A, tp = 1.2/50s, 8/20s
PP
Combination Wavefor m 7.5 V
Pin 1 to Pin 3
I = 50mA
(3) BO
Breakover Voltage V 35 V
BO
Pin 1 to Pin 3
V = 0V, f = 1MH z
R
2 3.5 pF
Pin 1 to 2 or Pin 3 to Pin 2
O
Junc tion Capacitance C T = 25 C
J
V = 0V, f = 1MH z
R
1.2 2 pF
Pin 1 to Pin 3
Var iation in Junc tion V = 1V - 24V, f = 1MH z
R
DC 0.1 1.5 pF
(3) J
Capacitance Pin 1 to Pin 3
Notes:
(1): ESD Gun return path to Ground Reference Plane (GRP)
(2): Measured using a 1.2/50us voltage, 8/20us current combination waveform, RS = 8 Ohms. Clamping is defined as the peak voltage
across the device after the device snaps back to a conducting state.
(3): Guaranteed by design. Not production tested
TClamp2472S Page 2
www.semtech.com
Final Datasheet Rev 2.1 Semtech
November 18, 2015