uClamp1211Z Ultra Small Clamp 1-Line ESD Protection TM PROTECTION PRODUCTS - Z-PakPROTECTION PRODUCTS Features Description Clamp TVS diodes are designed to protect sensitive High ESD withstand Voltage: +/-30kV (Contact/Air) electronics from damage or latch-up due to ESD. They per IEC 61000-4-2 are designed to replace 0201 size multilayer varistors Able to withstand over 1000 ESD strikes per IEC (MLVs) in portable applications such as cell phones, note- 61000-4-2 Level 4 book computers, and other portable electronics. They Ultra-small 0200200200200201 pack1 pack1 pack1 pack1 packageageageageage features large cross-sectional area junctions for conduct- Protects one data or power line ing high transient currents. These devices offer desir- Low reverse current: <50nA (VR=12V) able characteristics for board level protection including Working voltage: +/- 12V fast response time, low operating and clamping voltage, Low capacitance: 25pF maximum and no device degradation. Solid-state silicon-avalanche technology The Clamp 1211Z is in a 2-pin SLP0603P2X3 pack- age. It measures 0.6 x 0.3 mm with a nominal height Mechanical Characteristics of only 0.25mm. The leads are finished with lead-free SLP0603P2X3 package NiPdAu. Each device will protect one line operating at Pb-Free, Halogen Free, RoHS/WEEE Compliant 12 volts. It gives the designer the flexibility to protect Nominal Dimensions: 0.6 x 0.3 x 0.25 mm single lines in applications where arrays are not practi- Lead Finish: NiPdAu cal. The combination of small size and high ESD surge Marking : Marking code + dot matrix date code capability makes them ideal for use in portable applica- tions such as cellular phones, digital cameras, and Packaging : Tape and Reel tablet PCs. Applications Cellular Handsets & Accessories Portable Instrumentation 12V Power Protection Tablet PC Nominal Dimensions Schematic 0.62 0.22 0.32 1 0.16 0.355 BSC 2 0.25 SLP0603P2X3 (Bottom View) Nominal Dimensions (mm) www.semtech.com Revision 03/7/2013 1uClamp1211Z PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit PPeak Pulse Power (tp = 8/20s) 1s25 Watt pk M)aximum Peak Pulse Current (tIp = 8/20s 5sAmp pp 1 ESD per IEC 61000-4-2 (Air) V +/- 30 kV ESD 1 ESD per IEC 61000-4-2 (Contact) +/- 30 OTperating Temperature -C55 to +125 J STtorage Temperature -C55 to +150 STG o Electrical Characteristics (T=25 C) Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off VoltageP2in 1 to 2 or 2 to 1 1V RWM RVeverse Breakdown Voltage I = 1mA 163.3 191V BR t Pin 1 to 2 or 2 to 1 RIeverse Leakage Current V = 12V, T=25C <010 5An R RWM Pin 1 to 2 or 2 to 1 CVlamping Voltage I = 1A, tp = 8/20s 2V0 C PP Pin 1 to 2 or 2 to 1 CVlamping Voltage I = 5A, tp = 8/20s 2V5 C PP Pin 1 to 2 or 2 to 1 2, 3 Dynamic Resistance Rt0lp = 0.2 / 100ns 0s.3 Ohm DYN JCunction Capacitance V=90V, f = 1MHz 152Fp j R Notes 1)ESD gun return path connected to ESD ground reference plane. 2)Transmission Line Pulse Test (TLP) Settings: t = 100ns, t = 0.2ns, I and V averaging window: t = 70ns to p r TLP TLP 1 t = 90ns. 2 3) Dynamic resistance calculated from I = 4A to I = 16A TLP TLP www.semtech.com 2013 Semtech Corporation 2