1N5550US THRU 1N5554US Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Features Description Quick reference data u Low reverse leakage current u Hermetically sealed in fused metal oxide V = 200 - 1000V R u Good thermal shock resistance I 5.0A F = u Low forward voltage drop t = 2S rr u Avalanche capability V = 1.0V F These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, and JANTXV versions. Absolute Maximum Ratings Electrical specifications T = 25C unless otherwise specified. A 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US Symbol Units Working Reverse Voltage V 200 400 600 800 1000 V RWM Average Forward Current 55 C in free air, lead length I 5.0 A F(AV) 0.375 Repetitive Surge Current 55 C in free air, lead length I 25 A FRM 0.375 Non-Repetitive Surge Current (tp = 8.3mS V & T ) I 100 A R JMAX FSM (tp = 8.3mS, V & 25 C) 150 R Storage Temperature Range T -65 to +175 C STG Revision: August 22nd, 2011 1 www.semtech.com1N5550US THRU 1N5554US POWER DISCRETES Electrical Specifications Symbol 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US Units Average Forward Current (sine wave) - max. T = 55 C I 3.0 A A F(AV) - max. L = 3/8 T = 55 C I 5.0 L F(AV) 2 2 2 I t for fusing (t = 8.3mS) max I t 42 A S Forward Voltage Drop max. I = 3.0A, T= 25 C V 1.0 V F j F Reverse Current max. V , Tj = 25C I 1.0 A RWM R V , Tj = 125C I 60 RWM R Reverse Recovery Time max. trr 2.0 S 0.5A I to 1.0A I recovers to 0.25A I F RM RM(REC) Junction Capacitance typ. Cj 92 pF V = 5V, f = 1MHz R Thermal Characteristics Symbol 1N5550US 1N5551US 1N5552US 1N5553US 1N5554US Units R R at JEC JEC L= 0 6.5 C/W inch Typical Characteristics Fig 1. Typical junction capacitance as a function of reverse voltage. www.semtech.com 2011 Semtech Corp. 2