X-On Electronics has gained recognition as a prominent supplier of SBD10C200F MOSFET across the USA, India, Europe, Australia, and various other global locations. SBD10C200F MOSFET are a product manufactured by Silan. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SBD10C200F Silan

SBD10C200F electronic component of Silan
Images are for reference only
See Product Specifications
Part No.SBD10C200F
Manufacturer: Silan
Category: MOSFET
Description: Pre-ordered Products TO-220F RoHS
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2325 ea
Line Total: USD 0.23

Availability - 4216
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4216
Ship by Fri. 09 Aug to Wed. 14 Aug
MOQ : 1
Multiples : 1
1 : USD 0.232
10 : USD 0.2005
50 : USD 0.1869
100 : USD 0.1701
500 : USD 0.1625
1000 : USD 0.158

   
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We are delighted to provide the SBD10C200F from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SBD10C200F and other electronic components in the MOSFET category and beyond.

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The SBD10C200F is a dual high-voltage dual-channel MOSFET produced by Silan. It is designed for use in switching power supplies, motor control, and LED lighting applications. The device is constructed using a silicon-germanium-based DMOS technology for high power and low power losses plus a rugged design. The device comes with pre-ordered products, TO-220F RoHS copper base standoffs, and is RoHS compliant. It is rated for an operating temperature range of -55°C to +150°C, and it has a maximum pulsed drain current of 8 A and a maximum drain source voltage of 200V. Other features of the SBD10C200F include low gate and reverse body leakage, low on-state resistance, and low thermal resistance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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