X-On Electronics has gained recognition as a prominent supplier of SVF2N60F(S) MOSFETs across the USA, India, Europe, Australia, and various other global locations. SVF2N60F(S) MOSFETs are a product manufactured by Silan. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SVF2N60F(S) Silan

SVF2N60F(S) electronic component of Silan
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Part No.SVF2N60F(S)
Manufacturer: Silan
Category: MOSFETs
Description: MOSFET N Trench 600V 2A 4V @ 250uA 4.2 Ω @ 1A,10V TO-220F RoHS
Datasheet: SVF2N60F(S) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
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We are delighted to provide the SVF2N60F(S) from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SVF2N60F(S) and other electronic components in the MOSFETs category and beyond.

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The SVF2N60F(S) is a MOSFET N Trench 600V 2A 4V @ 250uA 4.2 O @ 1A, 10V TO-220F RoHS manufactured by Silan. It is a Power MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high current switching applications. This MOSFET features a 600V drain-source breakdown voltage, 2A, a Gate-Source Voltage of 4V @ 2A, and a Gate-Source Voltage of 4.2 O @ 1A, 10V (max). The device is housed in a TO-220F package, making it suitable for a variety of applications such as power conversions, DC/DC converters, motor drives, and other power switching applications. It is RoHS compliant, meaning that it meets all relevant environmental standards to ensure that it is safe for use in consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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