Ultra-Low Pressure 27 45 131 Digital Sensor 167 SM9333/SM9336 Series 170 Differential Pressure Sensors 175 FEATURES 169 0 Pressure ranges: 125 and 250 Pa Differential 61 Accuracy after Autozero: < 1%FS 2 16 bit I C Digital interface Pressure calibrated and temperature compensated output o Compensated temperature range: -20 to 85 C DESCRIPTION Combining the pressure sensor with a signal-conditioning ASIC in a The SM9333/SM9336 are digital, ultra-low pressure sensors offering single package simplifies the use of advanced silicon micro-machined state-of-the-art MEMS pressure transducer technology and CMOS pressure sensors. The pressure sensor can be mounted directly on a mixed signal processing technology to produce a digital, fully standard printed circuit board and a high level, calibrated pressure conditioned, multi-order pressure and temperature compensated signal can be acquired from the digital interface. This eliminates the sensor in JEDEC standard SOIC-16 package with a dual vertical need for additional circuitry, such as a compensation network or porting option. It is available in a differential pressure configuration. microcontroller containing a custom correction algorithm. The total accuracy after board mount and system level autozero is The SM9333/SM9336 are shipped in sticks or tape & reel. less than 1%FS. The excellent warmup behavior and long term stability further assures its expected performance over the life of the part. Medical Industrial Sleep Apnea HVAC CPAP Airflow Measurement Ventilators Pressure Transmitters Gas Flow Instrumentation Pneumatic Gauges Air Flow Monitors Pressure Switches Life Sciences Safety Cabinets Gas Flow Instrumentation Silicon Microstructures, Inc. 2001-2018. All rights reserved +1-(408) 577-0100 sales si-micro.com I www.si-micro.com DOC 40DS9302.02 Page 1 SM9333/SM9336 Series www.si-micro.com 27 1. Absolute Maximum Ratings 45 o All parameters are specified at Vdd = 3.3 V supply voltage at 25 C, unless otherwise noted. 131 No. Characteristic Symbol Minimum Maximum Units 1 Supply Voltage V 3.0 5.5 V DD 167 170 2 Digital IO Voltage V -0.3 VDD+0.3 V IO,DIG 175 3 Max. Digital IO Current (DC) I -10 +10 mA IO,DIG (a,b) 4 Storage Temperature T -40 +125 C STG 169 (a, c) 5 Proof Pressure P 7 (1.0) kPa (PSI) Proof 0 (a, d) 61 6 Burst Pressure P 20 (2.9) kPa (PSI) Burst Notes: a. Tested on a sample basis. b. Clean, dry air compatible with wetted materials. Wetted materials include silicon, glass, RTV (silicone), gold, aluminum, copper, nickel, palladium, epoxy, stainless steel and plastic (mold compound). c. Proof pressure is defined as the maximum pressure to which the device can be taken and still perform within specifications after returning to the operating pressure range. d. Burst pressure is the pressure at which the device suffers catastrophic failure resulting in pressure loss through the device. 2. ESD No. Description Symbol Minimum Maximum Units 2.1 ESD HBM Protection at all Pins V -2 2 kV ESD(HBM) 3. External Components No. Description Symbol Min. Typ. Max. Units * 1 Supply bypass capacitor C 100 nF VDD * 2 I2C Data and clock pull up resistors R 4.7 kOhm P * Not tested in production 4. Calibrated Pressure Ranges Calibrated Pressure Ranges No. Device Type P (Pa) P (Pa) MIN MAX 1 SM9333 125 Differential -125 +125 2 SM9336 250 Differential -250 +250 Silicon Microstructures, Inc. 2001-2018. All rights reserved +1-(408) 577-0100 sales si-micro.com I www.si-micro.com DOC 40DS9302.02 Page 2