Product Information

SED14N65G

SED14N65G electronic component of SINO-IC

Datasheet
650V 14A 300mO@10V,1A 156W N Channel DFN-8(5.7x5.1) MOSFETs ROHS

Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0546 ea
Line Total: USD 1.05

773 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4797 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

SED14N65G
SINO-IC

1 : USD 0.9951
10 : USD 0.8219
30 : USD 0.7372
100 : USD 0.6507
500 : USD 0.5882
1000 : USD 0.562

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
Operating Temperature
LoadingGif

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The SED14N65G is a N Channel Dual Enhancement-Mode Field Effect Transistor (MOSFET) manufactured by SINO-IC. It has a 650V drain source voltage rating, with 14A of maximum continuous drain current. It has a maximum of 300 mO of on-resistance at 10V 1A, and is rated for 156W in a Dual Flat No-Lead (5.7x5.1) package. It is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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