SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Features Applications Any frequency between 1 and 80 MHz accurate to 6 decimal places WiFi, 3G, LTE, SDI, Ethernet, SONET, DSL 100% pin-to-pin drop-in replacement to quartz-based (VC)TCXO Telecom, networking, smart meter, wireless, test instrumentation Frequency stability as low as 5 ppm. Contact SiTime for tighter stability options Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz) Voltage control option with pull range from 12.5 ppm to 50 ppm LVCMOS compatible output with SoftEdge option for EMI reduction Voltage control, standby, output enable or no connect modes Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm Outstanding silicon reliability of 2 FIT, 10 times better than quartz Pb-free, RoHs and REACH compliant Electrical Characteristics Parameter Symbol Min. Typ. Max. Unit Condition Output Frequency Range f1 80 MHz Initial Tolerance F init -1 1 ppm At 25C after two reflows Stability Over Temperature F stab -5 +5 ppm Over operating temperature range at rated nominal power supply voltage and load. (see ordering codes on page 6) Contact SiTime for tighter stability options. Supply Voltage F vdd 50 ppb 10% Vdd (5% for Vdd = 1.8V) Output Load F load 0.1 ppm 15 pF 10% of load First year Aging F aging -2.5 +2.5 ppm 25C 10-year Aging -4.0 +4.0 ppm 25C Operating Temperature Range T use -20 +70 C Extended Commercial -40 +85 C Industrial Supply Voltage Vdd 1.71 1.8 1.89 V Contact SiTime for any other supply voltage options. 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.70 3.0 3.3 V 2.97 3.3 3.63 V Pull Range PR 12.5, 25, 50 ppm Upper Control Voltage VC U Vdd-0.1 V All Vdds. Voltage at which maximum deviation is guaranteed. Control Voltage Range VC L 0.1 V Control Voltage Input Impedance Z vc 100 k Frequency Change Polarity Positive slope Control Voltage -3dB Bandwidth V BW 8 kHz Current Consumption Idd 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V. 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V. Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down OE Disable Current I OD 31 mA 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down. Standby Current I std 70 A 10 A Vdd = 1.8V. ST = GND, output is Weakly Pulled Down. Duty Cycle DC 45 55 % All Vdds LVCMOS Rise/Fall Time Tr, Tf 1.5 2 ns LVCMOS option. Default rise/fall time, All Vdds, 10% - 90% Vdd. SoftEdge Rise/Fall Time SoftEdge Rise/Fall Time Table ns SoftEdge option. Frequency and supply voltage dependent. Output Voltage High VOH 90% Vdd OH = -7 mA, IOL = 7 mA, (Vdd = 3.3V, 3.0V) IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8V, 2.5V) Output Voltage Low VOL 10% Vdd IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8V) Input Voltage High VIH 70% Vdd Pin 1, OE or ST Input Voltage Low VIL 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z in 100 250 k SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Rev. 1.0 Revised November 12, 2015SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Electrical Characteristics (continued) Parameter Symbol Min. Typ. Max. Unit Condition Startup Time T start 10 ms Measured from the time Vdd reaches its rated minimum value OE Enable/Disable Time T oe 150 ns f = 80 MHz. For other frequencies, T oe = 100 ns + 3 cycles Resume Time T resume 6 10 ms Measured from the time ST pin crosses 50% threshold RMS Period Jitter T jitt 1.7 2 ps f = 10 MHz, Vdd = 2.5V, 2.8V or 3.3V 1.7 2 ps f = 10 MHz, Vdd = 1.8V RMS Phase Jitter (random) T phj 0.5 1 ps f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds Note: 1. All electrical specifications in the above table are measured with 15pF output load, Contact SiTime for higher drive options. Pin Configuration Pin Symbol Functionality Top View V control Voltage control 2 Output H or Open : specified frequency output Enable L: output is high impedance. Only output driver is disabled. 1 4 2 VC/OE/ST VDD 1 VC/OE/ST/NC H or Open : specified frequency output Standby L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I std. NC No connect (input receiver off) 2 3 OUT GND 2 GND Power Electrical and case ground 3 CLK Output Oscillator output 4 VDD Power Power supply voltage Note: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment when the device operates in OE/ST mode. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor- mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Parameter Min. Max. Unit Storage Temperature -65 150 C VDD -0.5 4 V Electrostatic Discharge 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) 260 C Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 260C Rev. 1.0 Page 2 of 7 www.sitime.com