DATA SHEET SKY66001-11: 2100 to 2200 MHz, +19 dBm Linear Power Amplifier Applications Residential femtocells VEN MMIC WCDMA, Band 1 VCC1 Small cells Driver Stage Power Stage Bias Bias Features Output Input Inter-Stage RF IN PA DA RF OUT Match Match Match Small signal gain: 28.6 dB VCC2 ACLR at POUT = +19 dBm: -51 dBc CPL OUT CPL IN PA on/off control S2993 I/O impedance internally matched to 50 Figure 1. SKY66001-11 Linear PA Block Diagram Single DC supply: 3.3 V to 4.6 V Minimal number of external components required Description Small footprint MCM (10-pin, 3 x 3 mm) package The SKY66001-11 linear power amplifier (PA) is a fully matched (MSL3, 260 C per JEDEC J-STD-020) surface-mount module developed for WCDMA applications operating from 2100 to 2200 MHz. The device meets the stringent spectral linearity requirements of WCDMA femtocell applications TM with high power-added efficiency. An integrated directional Skyworks Green products are compliant with coupler eliminates the need for any external coupler. all applicable legislation and are halogen-free. For additional information, refer to Skyworks The GaAs MMIC contains all active amplifier circuitry, which TM Denition of Green , document number includes input and interstage matching circuits. An output match SQ040074. into a 50 load, realized off-chip within the module package, optimizes efficiency and power performance. The SKY66001-11 is manufactured with Skyworks InGaP GaAs HBT process, which provides for all positive voltage DC supply operation and maintains high efficiency and good linearity. The 1 10 VCC1 VCC2 primary bias to the device can be supplied directly from any suitable power supply with an output of 4.2 V. Power down is achieved by setting the VEN pin to 0 V. No external supply side RF IN 2 9 RF OUT switch is needed since typical off leakage is a few microamps with full primary voltage supplied from the main power supply. GND 3 8 CPL IN The SKY66001-11 is packaged in a 10-pin, 3 x 3 mm Multi-Chip GND 4 7 GND Module (MCM), which allows for a highly manufacturable low-cost solution. 5 6 VEN CPL OUT A functional block diagram of the SKY66001-11 is shown in Figure 1. The 10-pin MCM package and pinout are shown in Figure 2. Signal pin assignments and functional pin descriptions S2992 are provided in Table 1. Figure 2. SKY66001-11 Pinout (Top View) Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 201936F Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice October 6, 2017 1 DATA SHEET SKY66001-11: 2100 TO 2200 MHz, +19 DBM LINEAR POWER AMPLIFIER Table 1. SKY66001-11 Signal Descriptions Pin Name Description Pin Name Description 1 VCC1 Input stage supply voltage 6 CPL OUT RF coupler output 2 RF IN RF input port 7 GND Ground 3 GND Ground 8 CPL IN RF coupler input 4 GND Ground 9 RF OUT RF output port 5 VEN Enable 10 VCC2 Output stage supply voltage Technical Description Electrical and Mechanical Specifications The SKY66001-11 PA contains all of the needed RF matching and The absolute maximum ratings of the SKY66001-11 are provided DC biasing circuits. The device is a two-stage, HBT InGaP device in Table 2. The recommended operating conditions are specified optimized for high linearity and power efficiency. These features in Table 3 and electrical specifications are provided in Table 4. make the device suitable for wideband digital applications where Typical performance characteristics of the SKY66001-11 are PA linearity and power consumption are of critical importance illustrated in Figures 3 to 11. (e.g., small cell and infrastructure applications). The device is designed for standard WCDMA modulated signals. Under these stringent test conditions, the device exhibits excellent spectral purity and power efficiency. 1 Table 2. SKY66001-11 Absolute Maximum Ratings Parameter Symbol Minimum Maximum Units Supply voltage (VCC1, VCC2) VCC 0 +4.6 V Total supply current ICC 700 mA Logic control input voltage (VEN) VCTL -0.5 3.1 V 2 Case operating temperature TC -40 +85 C Storage temperature TSTG -55 +150 C Junction temperature TJ +150 C Thermal resistance JC 60 C/W Electrostatic discharge: ESD Charged Device Model (CDM), Class 4 500 V Human Body Model (HBM), Class 1C 1000 V Machine Model (MM), Class A 150 V 1 Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device. 2 Case operating temperature (Tc) refers to the temperature of the bottom ground pad. ESD HANDLING: Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device must be protected at all times from ESD when handling or transporting. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD handling precautions should be used at all times. Skyworks Solutions, Inc. Phone 781 376-3000 Fax 781 376-3100 sales skyworksinc.com www.skyworksinc.com 2 October 6, 2017 Skyworks Proprietary Information Products and Product Information are Subject to Change Without Notice 201936F