Applications Low loss, high power switches SMP1302-085LF: Surface Mount PIN Diode Low distortion attenuators for High Power Switch Applications The SMP1302-085LF is a surface mountable, low capacitance silicon PIN diode in a low Features thermal resistance QFN-2, 2 x 2 mm plastic package. The SMP1302-085LF is designed Low profile, as a shunt connected PIN diode for high power, high volume switch and attenuator ultraminiature 2 x 2 mm applications from 10 MHz to beyond 6 GHz. Maximum resistance at 100 mA is 1.5 W QFN surface mount and maximum capacitance at 30 V is 0.3 pF. package with exposed paddle The combination of low junction capacitance, low parasitic inductance, low thermal resistance and nominal 50 m I region width, makes these diodes useful in large signal Low thermal resistance (40 C/W) switches and attenuator applications. Suitable for 50 W CW With its 3 W dissipation power rating the SMP1302-085LF is capable of handling more T-R switches than 50 W CW and 500 W peak (1 s pulse, 1% duty cycle), in a shunt connected T-R switch. The SMP1302 is described in a 41 dBm T-R switch designed at 2 GHz which Low capacitance operated with low loss, high isolation and low distortion. (0.3 pF) Low distortion Design information for high power switches may be found in the Skyworks Application performance Note Design with PIN Diodes. Lead (Pb)-Free, Green, The 085 package is lead (Pb)-free and fully complies with Skyworks definition of Green: fully compliant with it meets all current RoHS requirements and contains no antimony (Sb) and no halogens, RoHS requirements such as bromine (Br). ESD Class 1C, human body model BUY BUY TM NOWNOW Innovation to Go New Free Designer Kits Select products and sample/designer kits available for purchase online. www.skyworksinc.comOperating Characteristics T = 25 C, unless otherwise noted Parameter Symbol Condition Min. Typ. Max. Unit Reverse current I V = 200 V 10 A R R Capacitance C V = 30 V, f = 1 MHz 0.3 pF T30 R Resistance R I = 10 mA, f = 100 MHz 3 W S10 F Resistance R I = 100 mA, f = 100 MHz 1.0 1.5 W S100 F Forward voltage V I = 10 mA 0.8 V F F Carrier lifetime T I = 10 mA 700 ns L F I-Region width W 50 m CW thermal resistance Q 40 C/W JC Pulse thermal resistance Q Single 1 s pulse 3.5 C/W P Typical Performance Data 25 C, unless otherwise noted 1000 0.8 0.7 1 MHz 100 0.6 W 0.5 10 0.4 0.3 100 MHz 1 GHz 1 0.2 0.1 0.1 0 0.01 0.1 1 10 100 0 1 2 5 10 20 50 100 Forward Current (mA) Reverse Voltage (V) Series Resistance vs. Current 100 MHz Capacitance vs. Reverse Voltage Series Resistance vs. Current 100 MHz Capacitance vs. Reverse Voltage 35 Absolute Maximum Ratings 30 Characteristic Value Reverse voltage 200 V 25 Forward current at 25 C 1.5 A 20 CW power dissipation at 25 C 3 W 15 1s pulse power dissipation 30 W 10 Storage temperature range -65 C to +200 C Operating temperature range -40 C to +150 C 5 Performance is guaranteed only under the conditions listed in the specifications table and is 0 not guaranteed under the full range(s) described by the Absolute Maximum specifications. Exceeding any of the absolute maximum/minimum specifications may result in permanent 1 10 100 1000 damage to the device and will void the warranty. Pulse Width (s) Typical Pulse Thermal Impedance Typical Pulse Thermal Impedance Series Resistance () Pulse Thermal Impedance (C/W) Capacitance (pF)