X-On Electronics has gained recognition as a prominent supplier of IRFR5305 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR5305 MOSFETs are a product manufactured by SLKORMICRO. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR5305 SLKORMICRO

IRFR5305 electronic component of SLKORMICRO
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See Product Specifications
Part No.IRFR5305
Manufacturer: SLKORMICRO
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet: IRFR5305 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5746 ea
Line Total: USD 0.57 
Availability - 653
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
653
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5746
10 : USD 0.4714
30 : USD 0.4256
100 : USD 0.3703
500 : USD 0.3054
1000 : USD 0.2902

   
Manufacturer
Product Category
Package
Rohs
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We are delighted to provide the IRFR5305 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR5305 and other electronic components in the MOSFETs category and beyond.

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The IRFR5305 is an N-Channel Power MOSFET manufactured by SLKORMICRO. It is designed for use in switching and linear applications in the original equipment and industrial market segments. The device has an extended drain-source breakdown voltage range of 30V-100V and an R?JC rating of 3.1°C/W. It is available in TO-252 packages with leads compliant to the standard lead-free and RoHS compliant industry requirements. The device uses high cell density, logic level gate drive MOSFET technology to provide reliable, low-on-resistance and easy utilization. In addition, it has an Avalanche energy rating of 2A to ensure reliable operation in high electrical load applications. The device features an internal ESD protection which improves the immunity from stress related to electrostatic discharges.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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