X-On Electronics has gained recognition as a prominent supplier of 2N2326 SCRs across the USA, India, Europe, Australia, and various other global locations. 2N2326 SCRs are a product manufactured by Solid State. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

2N2326 Solid State

2N2326 electronic component of Solid State
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Part No.2N2326
Manufacturer: Solid State
Category: SCRs
Description: SCRs Silicon Controlled Rectifier
Datasheet: 2N2326 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.6106 ea
Line Total: USD 9.61 
Availability - 850
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
850
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 9.6106
5 : USD 7.7477
10 : USD 6.7486
50 : USD 6.3636

   
Manufacturer
Product Category
Packaging
Brand
Peak Repetitive Off-State Voltage Vdrm
Gate Trigger Current Max Igt
On State Rms Current Itrms
Thyristor Case Style
No. Of Pins
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N2326 from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N2326 and other electronic components in the SCRs category and beyond.

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TECHNICAL DATA SILICON CONTROLLED RECTIFIER Qualified per MIL-PRF-19500/276 Devices Qualified Level 2N2323 2N2324 2N2326 2N2328 JAN 2N2323S 2N2324S 2N2326S 2N2328S 2N2329 JANTX 2N2323A 2N2324A 2N2326A 2N2328A 2N2329S JANTXV 2N2323AS 2N2324AS 2N2326AS 2N2328AS MAXIMUM RATINGS 2N2323,S/ 2N2324,S/ 2N2326,S/ 2N2328,S/ Ratings Sym 2N2329,S Unit 2N2323A,S 2N2324A,S 2N2326A,S 2N2328A,S V 50 100 200 300 400 RM V 75 150 300 400 500 RM V 50 100 200 300 400 I 0.22 O Forward Current Surge Peak I 15 - Gate Current V 6 0 Operating Temperature T - 65 to +125 C op 0 T - 65 to +150 C 0 1) This average forward current is for an ambient temperature of 80 C and 180 electrical degrees of 2) Surge current is non - recurrent. The rate of rise of peak surge current shall not exceed 40 A during TO - 5 the first 5 s after switching from the off (blocking) to the on (conducting) state. This is measured from the point where the thyristor voltage has decayed to 90% of its initial blocking value. 3) 4) e through 2,000 ohm resistor. ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit SUBGROUP 2 TESTING R = 1 k 2N2323 thru 2N2329 2 2N2323S thru 2N2329S R = 2 k 2 10 I V = 50 Vdc R V = 100 Vdc R V = 200 Vdc R V = 300 Vdc R V = 400 Vdc 2N2329, S, R 6 Lake Street, Lawrence, MA 0 1841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 1 of 2 Page 2N2328, S, A, AS 2N2326, S, A, AS 2N2324, S, A, AS 2N2323, S, A, AS RBX1 Adc 2N2323AS thru 2N2328AS 2N2323A thru 2N2328A Reverse Blocking Current for package outline *See appendix A Gate connected to cathod Gate connected to cathode through 1,000 ohm resistor. conduction. stg mp Storage Junction Te KGM Vpk Cathode FSM Adc (2) Adc Average Forward Current (1) FBXM Vpk d Blocking Voltage Forwar (3) (3/4) (3/4) (3/4) (3/4) Vpk Working Peak Reverse Voltage Vdc Reverse Voltage 2N2323, A, AS, S 2N2324, A, AS, S 2N2326, A, AS, S 2N2328, A, AS, S 2N232, S JAN SERIES ELECTRICAL CHARACTERISTICS (cont) Characteristics Symbol Min. Max. Unit R = 1 k 2N2323 thru 2N2329 2 2N2323S thru 2N2329S R = 2 k 2 I 10 V = 50 Vdc R V = 100 Vdc R V = 200 Vdc R V = 300 Vdc R V = 400 Vdc 2N2329, S R Reverse Gate Current I 200 V = 6 Vdc Gate Trigger Voltage and Current V = V = 100 2 L R = 1 k 2N2323 thru 2N2329 and 0.80 e V 0.35 thru 2N2329S I 200 R = 2 k V 0.35 0.60 e I 20 SUBGROUP 4 TESTING 0 Exponential Rate of Voltage Rise T = 125 C A 50 R 400 , C = 0.1 to 1.0 F, repeti tion rate = 60 pps, L test duration = 15 seconds dv/dt = 1.8 v/ s, R = 1 k 2N2323 thru 2N2329 and 3 2N2323S thru 2N2329S dv/dt = 0.7 v/ s, R = 2 k 3 V V = 50 Vdc 47 V = 100 V 95 V = 200 Vdc 190 V = 300 Vdc 285 V = 400 Vdc 2N2329, S 380 V 2.2 ) i = 4a (pk) (pulse), pulse width = 8.5 ms, max duty cycle = 2% max FM V Gate trigger source voltage = 6 Vdc, trigger pulse width = 25 s min., R = 330 2 I 2.0 R = 1 k 2N2323 thru 2N2329 and 3 2N2323S thru 2N2329S R = 2 k 3 6 Lake Street, Lawrence, MA 01841 120101 1 - 800 - 446 - 1158 / (978) 794 - 1666 / Fax: (978) 689 - 0803 Page 2 of 2 2N2323AS thru 2N2328AS 2N2323A thru 2N2328A and HOX mAdc F2 F1 AA = 10 mAdc = 100 mAdc, I = 24 Vdc max, I Holding Current FM V(pk Forward on Voltage AA AA 2N2328, S, A, AS AA 2N2326, S, A, AS AA 2N2324, S, A, AS dc AA 2N2323, S, A, AS 2N2323AS thru 2N2328AS FBX 2N2323A thru 2N2328A and Vdc GT1 Adc 2N2323AS thru 2N2328AS GT1 Vdc 2N2323A thru 2N2328A and GT1 Adc 2N2323S GT1 Vdc FBX = 6 Vdc R KG KG Adc 2N2328, S, A, AS 2N2326, S, A, AS 2N2324, S, A, AS 2N2323, S, A, AS FBX1 Adc 2N2323AS thru 2N2328AS 2N2323A thru 2N2328A Forward Blocking Current

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
SOLID STATE OPT
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