2N6027RLRAG ON Semiconductor

2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers 2N6027, 2N6028 MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Power Dissipation* P 300 mW F Derate Above 25C 4.0 mW/C 1/ JA DC Forward Anode Current* I 150 mA T Derate Above 25C 2.67 mA/C DC Gate Current* I 50 mA G Repetitive Peak Forward Current I A TRM 1.0 100 s Pulse Width, 1% Duty Cycle 2.0 20 s Pulse Width, 1% Duty Cycle* NonRepetitive Peak Forward Current I 5.0 A TSM 10 s Pulse Width Gate to Cathode Forward Voltage* V 40 V GKF Gate to Cathode Reverse Voltage* V 5.0 V GKR Gate to Anode Reverse Voltage* V 40 V GAR Anode to Cathode Voltage* (Note 1) V 40 V AK Capacitive Discharge Energy (Note 2) E 250 J Power Dissipation (Note 3) P 300 mW D Operating Temperature T 50 to +100 C OPR Junction Temperature T 50 to +125 C J Storage Temperature Range T 55 to +150 C stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data 1. Anode positive, R = 1000 GA Anode negative, R = open GA 2 2. E = 0.5 CV capacitor discharge energy limiting resistor and repetition. 3. Derate current and power above 25C. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 75 C/W JC Thermal Resistance, JunctiontoAmbient R 200 C/W JA Maximum Lead Temperature for Soldering Purposes T 260 C L ( 1/16 from case, 10 seconds maximum)