TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3811 JAN 2N3810L 2N3811L JANTX 2N3810U 2N3811U JANTV JANS ABSOLUTE MAXIMUM RATINGS (T = +25C unless otherwise noted) C Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage V 60 Vdc CEO Collector-Base Voltage V 60 Vdc CBO Emitter-Base Voltage V 5.0 Vdc EBO Collector Current I 50 mAdc C One Both 1 2 Section Sections P 200 350 mW Total Power Dissipation T = +25C T A Operating & Storage Junction Temperature T , T -65 to +200 C J stg Range TO-78 Note: 1. Derate linearly 1.143mW/C for T > +25C (one section) A 2. Derate linearly 2.00mW/C for T > +25C (both sections) A ELECTRICAL CHARACTERISTICS (T = +25C, unless otherwise noted) A Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage I = 100Adc V 60 Vdc (BR)CEO C Collector-Base Cutoff Current Adc V = 50Vdc 10 CB I CBO Adc V = 60Vdc 10 CB Emitter-Base Cutoff Current V = 4.0Vdc 10 Adc EB I EBO V = 5.0Vdc 10 EB Adc T4-LDS-0118 Rev. 1 (091095) Page 1 of 3 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR Qualified per MIL-PRF-19500 /336 ELECTRICAL CHARACTERISTICS (cont) Parameters / Test Conditions Symbol Min. Max. Unit ON CHARACTERTICS Forward-Current Transfer Ratio 2N3810, 2N3810L , 2N3810U h 100 I = 10 Adc, V = 5.0Vdc FE C CE 150 450 I = 100Adc, V = 5.0Vdc C CE 150 450 I = 1.0mAdc, V = 5.0Vdc C CE 125 I = 10mAdc, V = 5.0Vdc C CE 2N3811, 2N3811L, 2N3811U h 75 I = 1.0Adc, V = 5.0Vdc FE C CE 225 I = 10 Adc, V = 5.0Vdc C CE 300 900 I = 100Adc, V = 5.0Vdc C CE 300 900 I = 1.0mAdc, V = 5.0Vdc C CE 250 I = 10mAdc, V = 5.0Vdc C CE Collector-Emitter Saturation Voltage 0.2 I = 100Adc, I = 10Adc V Vdc C B CE(sat) 0.25 I = 1.0mAdc, I = 100Adc C B Base-Emitter Saturation Voltage 0.7 I = 100Adc, I = 10Adc C B V Vdc BE(sat) 0.8 I = 1.0mAdc, I = 100Adc C B Base-Emitter Non-Saturation Voltage V Vdc BE 0.7 V = 5.0Adc, I = 100Adc CE C DYNAMIC CHARACTERISTICS Forward Current Transfer Ratio, Magnitude I = 500Adc, V = 5.0Vdc, f = 30MHz h 1.0 fe C CE 1.0 5.0 I = 1.0mAdc, V = 5.0Vdc, f = 100MHz C CE Small-Signal Short Circuit Forward Current Transfer Ratio h 150 600 fe 2N3810, 2N3810L , 2N3810U I = 1.0mAdc, V = 10Vdc, f = 1.0kHz C CE 300 900 2N3811, 2N3811L , 2N3811U Small-Signal Short Circuit Input Impedance 3.0 30 h k je 2N3810, 2N3810L , 2N3810U I = 1.0mAdc, V = 10Vdc, f = 1.0kHz C CE 3.0 40 2N3811, 2N3811L , 2N3811U Small-Signal Short Circuit Output Admittance h mhos oe 2N3810, 2N3810L , 2N3810U 5.0 60 I = 1.0mAdc, V = 10Vdc, f = 1.0kHz C CE 2N3811, 2N3811L , 2N3811U Output Capacitance C pF obo 5.0 V = 5.0Vdc, I = 0, 100kHz f 1.0MHz CB E Input Capacitance C pF Ibo V = 5.0Vdc, I = 0, 100kHz f 1.0MHz 8.0 EB C T4-LDS-0118 Rev. 1 (091095) Page 2 of 3