X-On Electronics has gained recognition as a prominent supplier of AA1101W-TR across the USA, India, Europe, Australia, and various other global locations. AA1101W-TR are a product manufactured by STMicroelectronics. We provide cost-effective solutions for AA1101W-TR, ensuring timely deliveries around the world.

AA1101W-TR STMicroelectronics

AA1101W-TR electronic component of STMicroelectronics
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Part No.AA1101W-TR
Manufacturer: STMicroelectronics
Category: Unclassified
Description: AA1101W-TR
Dual-channel, half-bridge gate driver IC with 4A output current.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 0.1109 ea
Line Total: USD 277.25 
Availability - 0
MOQ: 2500  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 25 Nov to Fri. 29 Nov
MOQ : 2500
Multiples : 1
2500 : USD 0.1109
10000 : USD 0.105

   
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RoHS - XON
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We are delighted to provide the AA1101W-TR from our STMicroelectronics manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AA1101W-TR and other electronic components in the STMicroelectronics manufacturer and beyond.

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The AA1101W-TR is a dual-n-channel Logic Level Enhancement Mode Field Effect Transistor (FET). It is made by STMicroelectronics and is designed for normal and low voltage applications ranging from 1.2V to 5.2V. It has a wide drain-source breakdown voltage (25V minimum) and also comes equipped with a high dielectric strength gate oxide that ensures immunity to high voltage transients. The device offers low on-resistance (1.4O maximum), low gate charge, and low gate voltage threshold (1.8V typical), making it an ideal choice for power switching applications. It is housed in a SC75 package, making it easy to be integrated into circuits.

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