ACST1235-8FP STMicroelectronics

ACST1235-8FP Overvoltage protected AC switch Datasheet production data Description The ACST1235-8FP belongs to the ACS / ACST power switch family built with A.S.D. (application specific discrete) technology. This high performance device is suited to home appliances or industrial systems and drives loads up to 12 A. G This ACST1235-8FP switch embeds a Triac OUT structure and a high voltage clamping device able COM to absorb the inductive turn-off energy and TO-220FPAB withstand line transients such as those described (ACST1235-8FP) in the IEC 61000-4-5 standard. It offers an extremely high static dV/dt immunity of 2 kV/s minimum at 150 C junction temperature. Features ACST1235-8FP enables applications to be 12 A medium current AC Switch compliant with IEC 61000-4-4 and IEC 61000-4-5. Triac with self overvoltage protection Figure 1. Functional diagram High static immunity and dynamic commutation 800 V V / V OUT DRM RRM High junction temperature: T = 150 C max j Complies with UL standards (File ref: E81734) TO-220FPAB-insulated package 1500V RMS ECOPACK 2 and RoHs compliant component G Applications COM Motor control for home appliances: Washing machine universal drum motors Table 1. Device summary Compressor of fridge or air conditioner Symbol Value V /V DRM RRM I 12 A T(RMS) I 35 mA GT V /V 800 V DRM RRM April 2014 DocID026033 Rev 1 1/13 This is information on a product in full production. www.st.comCharacteristics ACST1235-8FP 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Test conditions Value Unit I On-state rms current (full sine wave) T = 97 C 12 A T(RMS) c t = 16.7 ms 105 p Non repetitive surge peak on-state current I A TSM (T initial = 25 C) j t = 20 ms 100 p 2 2 ItI t value for fusing (full cycle sine wave) t = 10 ms 66 As p Critical rate of rise on-state current dI/dt F = 60Hz T = 150 C 100 A/s j I = 2 x I t 100 ns G GT, r V /V Repetitive peak off-state voltage T = 150 C 800 V DRM RRM j (1) V Non repetitive line peak pulse voltage T = 25 C 2 kV PP j (1) (dI/dt) Non repetitive critical current rate of rise at breakover T = 25 C 150 A/s BO j I Peak gate current t = 20 s T = 150 C 1 A GM p j P Peak gate power t = 20 s T = 150 C 10 W GM p j P Average gate power dissipation T = 150 C 0.1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +150 C j T Maximum lead temperature for soldering during 10 s 260 C L V Insulation rms voltage (60 seconds) 1.500 V ins(rms) 1. according to test described by standard IEC 61000-4-5 (see Figure 19) Table 3. Electrical characteristics Symbol Test conditions Quadrant T Value Unit j MAX. 35 I V = 12 V, R = 33 I - II - III 25 C mA GT D L MIN. 1.75 V V = 12 V, R = 33 I - II - III 25 C MAX. 1.0 V GT D L V V = V , R = 3.3 k I - II - III 150 C MIN. 0.2 V D DRM L GD (1) I I = 500 mA, gate open 25 C MAX. 30 mA H T I I = 1.2 x I I - II - III 25 C MAX. 40 mA L G GT 125 C MIN. 4000 (1) dV/dt V = 67% V /V , gate open V/s D DRM RRM 150 C MIN. 2000 Without snubber 125 C MIN. 12 (1) (dI/dt)c A/ms (dI/dt)c = 15 V/s 150 C MIN. 6 V I = 0.1 mA, t = 1 ms MIN. 850 V CL CL p 1. For both polarities of OUT pin referenced to COM pin 2/13 DocID026033 Rev 1