ACST2 Datasheet 2 A - 800 V overvoltage protected AC switch Features OUT Triac with overvoltage crowbar technology High noise immunity: static dV/dt > 500 V/s TO-220FPAB insulated package: G COM OUT complies with UL standards (File ref : E81734) G COM DPAK TO-220FPAB insulation voltage: 2000 V RMS Benefits: OUT Enables equipment to meet IEC 61000-4-5 High off-state reliability with planar technology Needs no external overvoltage protection Reduces the power passive component count Interfaces directly with the micro-controller G High immunity against fast transients described in IEC 61000-4-4 standards COM Applications AC mains static switching in appliance and industrial control systems Driving low power highly inductive loads like solenoid, pump, fan, and micro- motor Description Product status link The ACST2 series belongs to the ACS / ACST power switch family. This high performance device is suited to home appliances or industrial systems and drives ACST2 loads up to 2 A. Product summary This ACST2 switch embeds a Triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those I 2 A T(RMS) described in the IEC 61000-4-5 standards. The component needs a low gate current V /V 800 V to be activated (I < 10 mA) and still shows a high electrical noise immunity DRM RRM GT complying with IEC standards such as IEC 61000-4-4 (fast transient burst test). I 10 mA GT DS5161 - Rev 6 - December 2019 www.st.com For further information contact your local STMicroelectronics sales office.ACST2 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit T = 105 C TO-220FPAB c I On-state rms current (full sine wave) 2 A T(RMS) T = 110 C DPAK c t = 20 ms f = 50 Hz 8.0 p Non repetitive surge peak on-state current I A TSM T initial = 25 C, (full cycle sine wave) j t = 16.7 ms f = 60 Hz 8.4 p 2 2 2 t = 10 ms 0.5 I t I t for fuse selection p A s dI/dt Critical rate of rise on-state current I = 2 x I , tr 100 ns f = 120 Hz T = 125 C 50 A/s G GT j (1) (1) T = 25 C V Non repetitive line peak pulse voltage 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 s) T = 125 C 10 W GM p j I Peak gate current (t = 20 s) T = 125 C 1.6 A GM p j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j T Lead temperature for soldering during 10 s (at 3 mm from plastic case) 260 C L V Insulation rms voltage (60 seconds) 2000 V ins 1. according to test described by standard IEC 61000-4-5, see Figure 16 for conditions Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit (1) I Max. 10 mA GT V = 12 V, R = 33 I - II - III OUT L V Max. 1.1 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD OUT DRM L j (2) I I = 100 mA Max. 10 mA OUT H I - III Max. 25 mA I I = 1.2 x I L G GT II Max. 35 (2) V = 67% V , gate open, T = 125 C dV/dt OUT DRM j Min. 500 V/s (2) (dV/dt)c = 15 V/s, T = 125 C (dI/dt)c Min. 0.5 A/ms j V I = 0.1 mA, t = 1 ms Min. 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin DS5161 - Rev 6 page 2/15