ACST2 Overvoltage protected AC switch Features OUT Triac with overvoltage crowbar technology G High noise immunity: static dV/dt > 500 V/s COM ACST210-8FP, in the TO-220FPAB package, G provides insulation voltage rated at 1500 V rms OUT COM Benefits DPAK TO-220FPAB ACST210-8B Enables equipment to meet IEC 61000-4-5 ACST210-8FP High off-state reliability with planar technology Figure 1. Functional diagram Needs no external overvoltage protection Reduces component count OUT Interfaces directly with the micro-controller High immunity against fast transients described in IEC 61000-4-4 standards Applications G AC on/off static switching in appliances and COM industrial control systems Driving low power highly inductive loads like solenoid, pump, fan, and micro-motor Table 1. Device summary Symbol Value Unit Description I 2A T(RMS) The ACST2 series belongs to the ACS/ACST V /V 800 V DRM RRM power switch family built with A.S.D. (application I 10 mA specific discrete) technology. This high GT performance device is suited to home appliances or industrial systems and drives loads up to 2 A. This ACST2 switch embeds a Triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standards. The component needs a low gate current to be activated (I < 10 mA) GT and still shows a high electrical noise immunity TM: ACS is a trademark of STMicroelectronics complying with IEC standards such as : A.S.D. is a registered trademark of IEC 61000-4-4 (fast transient burst test). STMicroelectronics July 2010 Doc ID 13304 Rev 3 1/13 www.st.com 13Characteristics ACST2 1 Characteristics Table 2. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit TO-220FPAB T = 105 C A c I On-state rms current (full sine wave) 2 T(RMS) DPAK T = 110 C c F = 60 Hz t = 16.7 ms 8.4 A Non repetitive surge peak on-state current I TSM (full cycle sine wave, T initial = 25 C) J F = 50 Hz t = 20 ms 8.0 ItI t Value for fusing t = 10 ms 0.5 A s p Critical rate of rise of on-state current dI/dt F = 120 Hz Tj = 125 C 50 A/s I = 2 x I , t = 100 ns G GT r (1) (1) V Non repetitive line peak mains voltage Tj = 25 C 2 kV PP P Average gate power dissipation Tj = 125 C 0.1 W G(AV) P Peak gate power dissipation (t = 20 s) Tj = 125 C 10 W GM p I Peak gate current (t = 20 s) Tj = 125 C 1.6 A GM p T Storage junction temperature range -40 to +150 stg C T Operating junction temperature range -40 to +125 j T Maximum lead soldering temperature during 10 s (at 3 mm from plastic case) 260 C l V Insulation rms voltage T0-220FPAB 1500 V INS(RMS) 1. According to test described in IEC 61000-4-5 standard and Figure 18 Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test conditions Quadrant Value Unit (1) I V = 12 V, R = 33 I - II - III MAX 10 mA GT OUT L V V = 12 V, R = 33 I - II - III MAX 1.1 V GT OUT L V V = V , R = 3.3 k,T = 125 C I - II - III MIN 0.2 V GD OUT DRM L j (2) I I = 100 mA MAX 10 mA H OUT I - III MAX 25 I I = 1.2 x I mA L G GT II MAX 35 (2) dV/dt V = 67% V gate open, T = 125 C MIN 500 V/s OUT DRM j (2) (dI/dt)c (dV/dt)c = 15 V/s, T = 125 C MIN 0.5 A/ms j V I = 0.1 mA, t = 1 ms, T = 25 C MIN 850 V CL CL p j 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin 2/13 Doc ID 13304 Rev 3