ACST830-8GTR STMicroelectronics

ACST8 Datasheet 8 A - 800 V overvoltage protected AC switch Features OUT Triac with overvoltage protection High noise immunity: static dV/dt > 2000 V/s G G OUT TO-220FPAB insulated package: OUT COM COM complies with UL standards (File ref : E81734) TO-220AB TO-220FPAB insulation voltage: 2000 V RMS OUT Benefits: Enables equipment to meet IEC 61000-4-5 G High off-state reliability with planar technology Needs no external overvoltage protection COM DPAK Reduces the power passive component count High immunity against fast transients described in IEC 61000-4-4 standards OUT Applications AC mains static switching in appliance and industrial control systems Drive of medium power AC loads such as: G Universal drum motor of washing machine Compressor of fridge or air conditioner COM Product status link Description ACST8 The ACST8 series belongs to the ACS/ACST power switch family built around A.S.D. (application specific discrete) technology. This high performance device is suited to Product summary home appliances or industrial systems and drives an induction motor up to 8 A. I 8 A This ACST8 switch embeds a Triac structure with a high voltage clamping device T(RMS) to absorb the inductive turn-off energy and withstand line transients such as those V /V 800 V DRM RRM described in the IEC 61000-4-5 standards. I 30 mA GT ACST8 shows a high noise immunity complying with IEC standards such as IEC 61000-4-4 (fast transient burst test). DS2106 - Rev 11 - September 2021 www.st.com For further information contact your local STMicroelectronics sales office.ACST8 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit T = 91 C TO-220FPAB c 8 On-state rms current (full sine I T = 105 C TO-220AB, DPAK A T(RMS) c wave) T = 43 C DPAK with 1 cm copper 2 amb Non repetitive surge peak on- t = 20 ms f = 50 Hz 80 p state current I A TSM T initial = 25 C, (full cycle sine j t = 16.7 ms f = 60 Hz 84 p wave) 2 2 2 t = 10 ms 42 I t I t for fuse selection p A s Critical rate of rise on-state current dI/dt f = 120 Hz T = 125 C 100 A/s j I = 2 x I , tr 100 ns G GT (1) T = 25 C V Non repetitive line peak pulse voltage 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 ms) T = 125 C 10 W GM p j I Peak gate current (t = 20 ms) T = 125 C 1.6 A GM p j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j T Lead temperature for soldering during 10 s (at 3 mm from plastic case) 260 C L V Insulation rms voltage (60 seconds) for TO-220FPAB 2000 V ins 1. according to test described by standard IEC 61000-4-5 standard and Figure 17 Table 2. Electrical characteristics per switch Symbol Test conditions Quadrant Value Unit (1) I Max. 30 mA GT V = 12 V, R = 33 I - II - III OUT L V Max. 1.0 V GT V V = V , R = 3.3 k, T = 125 C I - II - III Min. 0.2 V GD OUT DRM L j (2) I = 500 mA I Max. 30 mA H OUT I I = 1.2 x I I - II - III Max. 50 mA L G GT (2) V = 67% V , gate open, T = 125 C dV/dt Min. 2000 V/s OUT DRM j (2) Without snubber, T = 125 C (dI/dt)c Min. 8 A/ms j V I = 0.1 mA, t = 1 ms Min. 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin DS2106 - Rev 11 page 2/17