ACST4-7CFP STMicroelectronics

ACST4 Datasheet 4 A - 800 V overvoltage protected AC switch Features OUT Triac with overvoltage protection Low I (<10 mA) or high immunity (I < 35 mA) version GT GT G COM OUT High junction temperature: T = 150 C G COM j DPAK TO-220FPAB High noise immunity: static dV/dt > 1000 V/s TO-220FPAB insulated package: OUT complies with UL standards (File ref : E81734) insulation voltage: 2000 V RMS Benefits: Enables equipment to meet IEC 61000-4-5 High off-state reliability with planar technology G Needs no external overvoltage protection Reduces the power passive component count COM High immunity against fast transients described in IEC 61000-4-4 standards Applications AC mains static switching in appliance and industrial control systems Drive of medium power AC loads such as: Universal drum motor of washing machine Product status link Compressor of fridge or air conditioner ACST4 Description Product summary The ACST4 series belongs to the ACS / ACST power switch family. This high I 4 A T(RMS) performance device is suited to home appliances or industrial systems and drives loads up to 4 A. V /V 800 V DRM RRM This ACST4 switch embeds a Triac structure with a high voltage clamping device to I (ACST410) 10 mA GT absorb the inductive turn-off energy and withstand line transients such as those I (ACST435) 35 mA described in the IEC 61000-4-5 standards. The ACST410 needs a low gate current to GT be activated (I < 10 mA) and still shows a high electrical noise immunity complying GT with IEC standards such as IEC 61000-4-4 (fast transient burst test). DS2762 - Rev 10 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.ACST4 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit T = 102 C TO-220FPAB c 4 I T = 112 C On-state rms current (full sine wave) DPAK A T(RMS) c T = 60 C DPAK with 0.5 cm copper 1 amb t = 20 ms f = 50 Hz 32 p Non repetitive surge peak on-state current I A TSM T initial = 25 C, (full cycle sine wave) j f = 60 Hz t = 16.7 ms 30 p 2 2 2 t = 10 ms 6 I t I t for fuse selection p A s Critical rate of rise on-state current I = 2 x I , tr G GT dI/dt f = 120 Hz T = 125 C 100 A/s j 100 ns (1) (1) V T = 25 C Non repetitive line peak pulse voltage 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 s) T = 125 C 10 W GM p j I Peak gate current (t = 20 s) T = 125 C 1.6 A GM p j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j T Lead temperature for soldering during 10 s (at 3 mm from plastic case) 260 C L V Insulation rms voltage (60 seconds) 2000 V ins 1. according to test described by standard IEC 61000-4-5, see Figure 17 for conditions Table 2. Electrical characteristics (T = 25 C, unless otherwise specified) j Value Symbol Test conditions Quadrant Unit ACST410 ACST435 (1) I Max. 10 35 mA GT V = 12 V, R = 33 I - II - III OUT L V Max. 1.0 1.1 V GT V V = V , R = 3.3 k, T = 125 C GD OUT DRM L j I - II - III Min. 0.2 V (2) I = 500 mA I Max. 20 25 mA H OUT I I = 1.2 x I I - II - III Max. 40 60 mA L G GT (2) V = 67% V , gate open, T = 125 C dV/dt Min. 500 1000 V/s OUT DRM j (2) Without snubber, T = 125 C (dI/dt)c Min. 5 A/ms j (2) (dV/dt)c = 15 V/s, T = 125 C (dI/dt)c Min. 2 A/ms j V I = 0.1 mA, t = 1 ms Min. 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin DS2762 - Rev 10 page 2/17