ACST6-7SFP STMicroelectronics

ACST6 Overvoltage protected AC switch Features OUT Triac with overvoltage protection Low I (< 10 mA) GT TO-220FPAB insulated package: 1500 V rms G G OUT OUT COM Benefits COM Enables equipment to meet IEC 61000-4-5 TO-220AB TO-220FPAB ACST610-8T ACST610-8FP High off-state reliability with planar technology Needs no external overvoltage protection OUT OUT Reduces the power passive component count High immunity against fast transients described in IEC 61000-4-4 standards G G OUT COM COM Applications DPAK IPAK ACST610-8G ACST610-8R AC mains static switching in appliance and industrial control systems Drive of medium power AC loads such as: Figure 1. Functional diagram Universal motor of washing machine drum OUT Compressor for fridge or air conditioner Description The ACST6 series belongs to the ACS/ACST G power switch family built with A.S.D. (application specific discrete) technology. This high performance device is suited to home appliances COM or industrial systems, and drives loads up to 6 A. Table 1. Device summary This ACST6 switch embeds a Triac structure and a high voltage clamping device able to absorb the Symbol Value Unit inductive turn-off energy and withstand line I 6A transients such as those described in the T(RMS) IEC 61000-4-5 standards. The ACST610 needs V /V 800 V DRM RRM only low gate current to be activated I 10 mA GT (I < 10 mA) and still shows a high noise GT immunity complying with IEC standards such as IEC 61000-4-4 (fast transient burst test). TM: ACS is a trademark of STMicroelectronics. : A.S.D. is a registered trademark of STMicroelectronics July 2010 Doc ID 7297 Rev 10 1/15 www.st.com 15 Characteristics ACST6 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-220FPAB T = 92 C c 6 TO-220AB/ T = 106 C 2 2 c I On-state rms current (full sine wave) D PAK / I PAK A T(RMS) 2 D PAK with T = 62 C 1.5 2 amb 1cm copper F = 60 Hz t = 16.7 ms 47 A p Non repetitive surge peak on-state current T j I TSM initial = 25 C, ( full cycle sine wave) F = 50 Hz t = 20 ms 45 A p 2 2 2 ItI t for fuse selection t = 10 ms 13 A s p Critical rate of rise on-state current dI/dt F = 120 Hz T = 125 C 100 A/s j I = 2 x I (t 100 ns) G GT, r (1) V Non repetitive line peak pulse voltage T = 25 C 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 s) T = 125 C 10 W GM p j I Peak gate current (t = 20 s) T = 125 C 1.6 A GM p j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j T Maximum lead solder temperature during 10 ms (at 3 mm from plastic case) 260 C l V Insulation rms voltage TO-220FPAB 1500 V INS(RMS) 1. According to test described in IEC 61000-4-5 standard and Figure 19. Table 3. Electrical characteristics Symbol Test conditions Quadrant T Value Unit j (1) I V = 12 V, R = 33 I - II - III 25 C MAX. 10 mA GT OUT L V V = 12 V, R = 33 I - II - III 25 C MAX. 1.0 V GT OUT L V V = V , R = 3.3 k I - II - III 125 C MIN. 0.2 V GD OUT DRM L (2) I I = 500 mA 25 C MAX. 25 mA H OUT I I = 1.2 x I I - III 25 C MAX. 30 mA L G GT I I = 1.2 x I II 25 C MAX. 40 mA L G GT (2) dV/dt V = 67 % V , gate open 125 C MIN. 500 V/s OUT DRM (2) (dI/dt) (dV/dt) = 15 V/s 125 C MIN. 3.5 A/ms c c V I = 0.1 mA, t = 1 ms 25 C MIN. 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin 2/15 Doc ID 7297 Rev 10