ACST610-8GTR STMicroelectronics

ACST6 Overvoltage protected AC switch Datasheet - production data Benefits OUT Enables equipment to meet IEC 61000-4-5 High off-state reliability with planar technology Needs no external overvoltage protection G Reduces the power passive component count G OUT OUT COM High immunity against fast transients COM described in IEC 61000-4-4 standards TO-220AB TO-220FPAB ACST610-8T ACST610-8FP Applications OUT OUT AC mains static switching in appliance and industrial control systems Drive of medium power AC loads such as: G G OUT Universal motor of washing machine drum COM COM Compressor for fridge or air conditioner DPAK IPAK ACST610-8G ACST610-8R Description The ACST6 series belongs to the ACS/ACST power switch family built with A.S.D. (application Figure 1. Functional diagram specific discrete) technology. This high OUT performance device is suited to home appliances or industrial systems, and drives loads up to 6 A. This ACST6 switch embeds a Triac structure and a high voltage clamping device able to absorb the inductive turn-off energy and withstand line G transients such as those described in the IEC 61000-4-5 standards. The ACST610 needs COM only low gate current to be activated (I < 10 GT mA) and still shows a high noise immunity complying with IEC standards such as IEC Features 61000-4-4 (fast transient burst test). Triac with overvoltage protection Table 1. Device summary Low I (< 10 mA) GT Symbol Value Unit TO-220FPAB insulated package: complies with UL standards I 6A T(RMS) (file ref: E81734) V /V 800 V DRM RRM insulation voltage: 2000 V RMS I 10 mA GT May 2017 DocID7297 Rev 11 1/20 This is information on a product in full production. www.st.comCharacteristics ACST6 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-220FPAB T = 92 C c 6 TO-220AB/ T = 106 C 2 2 c I On-state rms current (full sine wave) D PAK / I PAK A T(RMS) 2 D PAK with T = 62 C 1.5 2 amb 1cm copper F = 60 Hz t = 16.7 ms 47 A p Non repetitive surge peak on-state current T j I TSM initial = 25 C, ( full cycle sine wave) F = 50 Hz t = 20 ms 45 A p 2 2 2 ItI t for fuse selection t = 10 ms 13 A s p Critical rate of rise on-state current dI/dt F = 120 Hz T = 125 C 100 A/s j I = 2 x I (t 100 ns) G GT, r (1) V Non repetitive line peak pulse voltage T = 25 C 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 s) T = 125 C 10 W GM p j I Peak gate current (t = 20 s) T = 125 C 1.6 A GM p j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j T Maximum lead solder temperature during 10 ms (at 3 mm from plastic case) 260 C l V Insulation RMS voltage (60 seconds) TO-220FPAB 2000 V INS(RMS) 1. According to test described in IEC 61000-4-5 standard and Figure 18. Table 3. Electrical characteristics Symbol Test conditions Quadrant T Value Unit j (1) I V = 12 V, R = 33 I - II - III 25 C MAX. 10 mA GT OUT L V V = 12 V, R = 33 I - II - III 25 C MAX. 1.0 V GT OUT L V V = V , R = 3.3 k I - II - III 125 C MIN. 0.2 V GD OUT DRM L (2) I I = 500 mA 25 C MAX. 25 mA H OUT I I = 1.2 x I I - III 25 C MAX. 30 mA L G GT I I = 1.2 x I II 25 C MAX. 40 mA L G GT (2) dV/dt V = 67 % V , gate open 125 C MIN. 500 V/s OUT DRM (2) (dI/dt) (dV/dt) = 15 V/s 125 C MIN. 3.5 A/ms c c V I = 0.1 mA, t = 1 ms 25 C MIN. 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin 2/20 DocID7297 Rev 11