ACST10-7CT STMicroelectronics

ACST10 Overvoltage protected AC switch Features OUT Triac with overvoltage crowbar technology Low I (< 10 mA) or high immunity GT (I < 35 mA) version GT G G High noise immunity: static dV/dt > 2000 V/s OUT OUT COM COM TO-220FPAB insulated package: 1500 V rms TO-220FPAB TO-220AB Benefits ACST1010-7T ACST1010-7FP ACST1035-7T ACST1035-7FP Enables equipment to meet IEC 61000-4-5 High off-state reliability with planar technology Need no external over voltage protection Figure 1. Functional diagram Reduces the power passive component count OUT High immunity against fast transients described in IEC 61000-4-4 standards Applications AC mains static switching in appliance and G industrial control systems Drive of medium power AC loads such as: COM Universal motor of washing machine drum Compressor for fridge or air conditioner Table 1. Device summary Symbol Value Unit Description I 10 A T(RMS) The ACST10 series belongs to the ACS/ACST V /V 700 V DRM RRM power switch family built with A.S.D. (application specific discrete) technology. This high I 10 or 35 mA GT performance device is suited to home appliances or industrial systems, and drives loads up to 10 A. This ACST10 switch has a Triac structure and a high voltage clamping device to absorb the inductive turn-off energy and withstand transients such as those described in the IEC 61000-4-5 standard. The ACST1010-7 needs a low gate current to be activated (I < 10 mA) and still GT TM: ACS is a trademark of STMicroelectronics shows a high noise immunity complying with IEC : A.S.D. is a registered trademark of STMicroelectronics 61000-4-4 standard. The ACST1035-7 offers a high static dV/dt immunity of 2 kV/s minimum. July 2010 Doc ID 15237 Rev 3 1/13 www.st.com 13Characteristics ACST10 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-220AB T = 105 C c I On-state rms current (full sine wave) 10 A T(RMS) TO-220FPAB T = 84 C c F = 60 Hz t = 16.7 ms 105 A p Non repetitive surge peak on-state current I TSM T initial = 25 C, ( full cycle sine wave) j F = 50 Hz t = 20 ms 100 A p 2 2 2 ItI t for fuse selection t = 10 ms 66 A s p Critical rate of rise on-state current dI/dt F = 120 Hz T = 125 C 100 A/s j I = 2 x I (t 100 ns) G GT, r (1) V Non repetitive line peak pulse voltage T = 25 C 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 s) T = 125 C 10 W GM p j I Peak gate current (t = 20 s) T = 125 C 1.6 A GM p j T Storage temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j T Maximum lead solder temperature during 10 ms (at 3 mm from case) 260 C l V Insulation rms voltage T0-220FPAB 1500 V INS(RMS) 1. According to test described in IEC 61000-4-5 standard and Figure 17 Table 3. Electrical characteristics Value Symbol Test conditions Quadrant T Unit j ACST1010-7 ACST1035-7 (1) I V = 12 V, R = 33 I - II - III 25 C MAX. 10 35 mA GT OUT L V V = 12 V, R = 33 I - II - III 25 C MAX. 1.0 V GT OUT L V V = V , R = 3.3 I - II - III 125 C MIN. 0.2 V GD OUT DRM L (2) I I = 500 mA 25 C MAX. 30 50 mA H OUT I I = 1.2 x I I - II - III 25 C MAX. 50 70 mA L G GT (2) dV/dt V = 67 % V , gate open 125 C MIN. 200 2000 V/s OUT DRM (dV/dt)c = 15 V/s 4.4 (2) (dI/dt)c 125 C MIN. A/ms Without snubber 12 V I = 0.1 mA, t = 1 ms 25 C MIN. 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin 2/13 Doc ID 15237 Rev 3