ACST1210-7G STMicroelectronics

ACST12 Overvoltage protected AC switch Features OUT Triac with overvoltage crowbar technology OUT Low I (<10 mA) or high immunity GT (I <35 mA) version GT G High noise immunity: static dV/dt > 2000 V/s G OUT COM COM Benefits 2 D PAK TO-220AB Enables equipment to meet IEC 61000-4-5 ACST1210-7G ACST1210-7T High off-state reliability with planar technology ACST1235-7G ACST1235-7T Need no external over voltage protection Reduces the power passive component count Figure 1. Functional diagram High immunity against fast transients OUT described in IEC 61000-4-4 standards Applications AC mains static switching in appliance and industrial control systems G Drive of medium power AC loads such as: Universal motor of washing machine drum COM Compressor for fridge or air conditioner Table 1. Device summary Description Symbol Value Unit The ACST12 series belongs to the ACS/ACST I 12 A T(RMS) power switch family built with A.S.D. (application specific discrete) technology. This high V /V 700 V DRM RRM performance device is suited to home appliances I 10 or 35 mA GT or industrial systems and drives loads up to 12 A. This ACST12 switch embeds a Triac structure and a high voltage clamping device able to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standard. The ACST1210-7 needs a low gate current to be activated (I < 10 mA) GT and still provides a high electrical noise immunity complying with the IEC 61000-4-4 standard. The TM: ACS is a trademark of STMicroelectronics ACST1235-7 offers an extremely high static dV/dt : A.S.D. is a registered trademark of STMicroelectronics immunity of 2 kV/s minimum. December 2010 Doc ID 15238 Rev 4 1/13 www.st.com 13Characteristics ACST12 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit TO-220AB T = 104 C 12 2 c D PAK I On-state rms current full sine wave A T(RMS) 2 D PAK T = 47 amb 2 2 C with 1cm of Cu F = 60 Hz t = 16.7 ms 126 A p Non repetitive surge peak on-state current I TSM T initial = 25 C,( full cycle sine wave) j F = 50 Hz t = 20.0 ms 120 A p 2 2 2 ItI t for fuse selection t = 10 ms 95 A s p Critical rate of rise on-state current dI/dt F = 120 Hz T = 125 C 100 A/s j I = 2 x I (t 100 ns) G GT, r (1) V Non repetitive line peak pulse voltage T = 125 C 2 kV PP j P Average gate power dissipation T = 125 C 0.1 W G(AV) j P Peak gate power dissipation (t = 20 s) T = 125 C 10 W GM p j I Peak gate current (t = 20 s) T = 125 C 1.6 A GM p j T Storage temperature range - 40 to + 150 C stg T Operating junction temperature range - 40 to + 125 C j T maximum lead soldering temperature during 10 s (at 3 mm from plastic case) 260 C l 1. According to test described in IEC 61000-4-5 standard and Figure 19 Table 3. Electrical characteristics Value Unit Symbol Test conditions Quadrant T j ACST1210-7 ACST1235-7 Unit (1) I V = 12 V, R = 33 I - II - III 25 C MAX. 10 35 mA GT OUT L V V = 12 V, R = 33 I - II - III 25 C MAX. 1.0 V GT OUT L V V = V , R = 3.3 I - II - III 125 C MIN. 0.2 V GD OUT DRM L (2) I I = 500 mA 25 C MAX. 30 50 mA H OUT I I = 1.2 x I I - II - III 25 C MAX. 50 70 mA L G GT (2) dV/dt V = 67% V , gate open 125 C MIN. 200 2000 V/s OUT DRM (dV/dt)c = 15 V/s MIN. 5.3 (2) (dI/dt)c 125 C A/ms Without snubber MIN. 14 V I = 0.1 mA, t = 1 ms 25 C MIN. 850 V CL CL p 1. Minimum I is guaranteed at 5% of I max GT GT 2. For both polarities of OUT pin referenced to COM pin 2/13 Doc ID 15238 Rev 4