Product Information

BD436

BD436 electronic component of STMicroelectronics

Datasheet
Trans GP BJT PNP 32V 4A 3-Pin(3+Tab) SOT-32 Tube
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

26: USD 0.3505 ea
Line Total: USD 9.11

0 - Global Stock
MOQ: 26  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 26
Multiples : 1

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BD436
STMicroelectronics

26 : USD 0.3505
50 : USD 0.3435

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Emitter- Base Voltage Vebo
Brand
Collector-Emitter Saturation Voltage
Gain Bandwidth Product Ft
Maximum Dc Collector Current
Pd - Power Dissipation
Factory Pack Quantity :
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Additional Infomation About Product

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car-radio output stages. The complementary PNP types are BD434, SOT-32 BD436, and BD438 respectively. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN BD433 BD435 BD437 PNP BD434 BD436 BD438 V Collector-Base Voltage (I = 0) 22 32 45 V CBO E V Collector-Emitter Voltage (V = 0) 22 32 45 V CES BE V Collector-Emitter Voltage (I = 0) 22 32 45 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 4 A C I 7A CM Collector Peak Current (t 10 ms) I Base Current 1 A B o P 36 W tot Total Dissipation at T 25 C c o T Storage Temperature -65 to 150 C stg o T Max. Operating Junction Temperature 150 C j For PNP types voltage and current values are negative. 1/4 February 2003 BD433 BD434 BD435 BD436 BD437 BD438 THERMAL DATA o R Thermal Resistance Junction-case Max 3.5 C/W thj-case o R Thermal Resistance Junction-ambient Max 100 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off for BD433/434 V = 22 V 100 A CBO CB Current (I = 0) for BD435/436 V = 32 V 100 A E CB for BD437/438 V = 45 V 100 A CB I Collector Cut-off for BD433/434 V = 22 V 100 A CES CE Current (V = 0) for BD435/436 V = 32 V 100 A BE CE for BD437/438 V = 45 V 100 A CE I Emitter Cut-off Current V = 5 V 1 mA EBO EB (I = 0) C V * Collector-Emitter I = 100 mA for BD433/434 22 V CEO(sus) C Sustaining Voltage for BD435/436 32 V (I = 0) for BD437/438 45 V B V * Collector-Emitter I = 2 A I = 0.2 A CE(sat) C B Saturation Voltage for BD433/434 0.2 0.5 V for BD435/436 0.2 0.5 V for BD437/438 0.2 0.6 V V * Base-Emitter Voltage I = 10 mA V = 5 V 0.58 V BE C CE I = 2 A V = 1 V C CE for BD433/434 1.1 V for BD435/436 1.1 V for BD437/438 1.2 V h * DC Current Gain I = 10 mA V = 5 V FE C CE for BD433/434 40 130 for BD435/436 40 130 for BD437/438 30 130 I = 500 mA V = 1 V 85 140 C CE IC = 2 A VCE = 1 V for BD433/434 50 for BD435/436 50 for BD437/438 40 h /h * Matched Pair I = 500 mA V = 1 V 1.4 FE1 FE2 C CE f Transition frequency I = 250 mA V = 1 V 3 MHz T C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % 2/4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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