DVIULC6-4SC6 Ultralow capacitance ESD protection Datasheet production data Features 4-line ESD protection (IEC 61000-4-2) Protects V when applicable BUS Ultralow capacitance: 0.6 pF at 825 MHz Fast response time compared with varistors SOT23-6L (JEDEC MO178AB) SOT23-6L package RoHS compliant Benefits Applications ESD standards compliance guaranteed at DVI ports up to 1.65 Gb/s device level, hence greater immunity at system HDMI ports up to 1.65 Gb/s level IEEE 1394a, and b up to 1.6 Gb/s ESD protection of V , when applicable, BUS USB 2.0 ports up to 480 Mb/s (high speed), allows ESD current flowing to ground when backwards compatible with USB 1.1 low and ESD event occurs on data line full speed Optimized rise and fall times for maximum data Ethernet port: 10/100/1000 Mb/s integrity SIM card protection Consistent D+ / D- signal balance: Optimum capacitance matching tolerance Video line protection for ultralow intra-pair skew: I/O to ground = 0.015 pF, Description I/O to I/O = 0.007 pF Matching high bit rate DVI, HDMI, and The DVIULC6-4SC6 is a monolithic, application IEEE 1394 requirements specific discrete device dedicated to ESD 2 protection of high speed interfaces, such as DVI, Low PCB space occupation: 9 mm HDMI, IEEE 1394a, and b, USB 2.0, Ethernet Low leakage current for longer operation of links and video lines. battery powered devices Its ultralow line capacitance secures a high level Higher reliability offered by monolithic of signal integrity without compromise in integration protecting sensitive chips against the most stringently characterized ESD strikes. Complies with these standards IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD883G-Method 3015-7 September 2012 Doc ID 11599 Rev 4 1/12 This is information on a product in full production. www.st.com 12Characteristics DVIULC6-4SC6 1 Characteristics Figure 1. Functional diagram I/O1 11 6 I/O4 GND 2 5 V BUS I/O2 3 4 I/O3 Table 1. Absolute ratings Symbol Parameter Value Unit IEC 61000-4-2 air discharge 15 V Peak pulse voltage IEC 61000-4-2 contact discharge 15 kV PP MIL STD883G-Method 3015-7 25 P Peak pulse power 80 W pp T Storage temperature range -55 to +150 C stg T Operating junction temperature range -40 to +125 C j T Lead solder temperature (10 seconds duration) 260 C L Table 2. Electrical characteristics (T = 25 C) amb Value Symbol Parameter Test conditions Unit Min. Typ. Max. I Leakage current V = 5 V - - 0.5 A RM RM Breakdown voltage V I = 1 mA 6 - - V BR R between V and GND BUS I = 1 A, t = 8/20 s PP p -- 12 V Any I/O pin to GND V Clamping voltage CL I = 5 A, t = 8/20 s PP p -- 17 V Any I/O pin to GND V = 0 V, F= 1 MHz - 0.85 1 Capacitance between I/O R C i/o-GND and GND V = 0 V, F= 825 MHz - 0.6 - R pF C Capacitance variation i/o- --0.015- between I/O and GND GND V = 0 V, F= 1 MHz - 0.42 0.5 R C Capacitance between I/O i/o-i/o V = 0 V, F= 825 MHz - 0.3 - R pF Capacitance variation C --0.007- i/o-i/o between I/O 2/12 Doc ID 11599 Rev 4