X-On Electronics has gained recognition as a prominent supplier of ESDA8P30-1T2 ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESDA8P30-1T2 ESD Suppressors / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESDA8P30-1T2 STMicroelectronics

ESDA8P30-1T2 electronic component of STMicroelectronics
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See Product Specifications
Part No.ESDA8P30-1T2
Manufacturer: STMicroelectronics
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes Small Transient Voltage Suppressor
Datasheet: ESDA8P30-1T2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

24000: USD 0.069 ea
Line Total: USD 1656

Availability - 0
MOQ: 24000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 16 Jul to Mon. 22 Jul
MOQ : 12000
Multiples : 1
12000 : USD 0.087
24000 : USD 0.0833
60000 : USD 0.0759

0
Ship by Mon. 22 Jul to Wed. 24 Jul
MOQ : 1
Multiples : 1
1 : USD 1.1219
10 : USD 0.8414
100 : USD 0.2098
500 : USD 0.1436
1000 : USD 0.111

   
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ESDA8P30-1T2 from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESDA8P30-1T2 and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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Pin1 Pin2 ESDA8P30-1T2 Datasheet Small transient voltage suppressor Features Low clamping voltage Peak pulse power: 300 W (8/20 s) Stand-off voltage 6.3 V SOD882T package Unidirectional diode Low leakage current: 0.3 A at 25 C Complies with the following standards: IEC 61000-4-2 level 4 30 kV (air discharge) 30 kV (contact discharge) Pin configuration Application Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones, tablets, portable multimedia USB V protection bus Power supply protection Battery protection Description Product status link The ESDA8P30-1T2 is a unidirectional single line TVS diode designed to protect the ESDA8P30-1T2 power line against EOS and ESD transients. The device is ideal for applications where high power TVS and board space saving are required. DS12517 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office. Pin1 Pin2 ESDA8P30-1T2 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge >30 V Peak pulse voltage kV pp IEC 61000-4-2 air discharge >30 P Peak pulse power (8/20 s) 300 W pp I Peak pulse current (8/20 s) 30 A pp T Operating junction temperature range -55 to 150 C op T Storage junction temperature range -55 to 150 C stg Figure 1. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR V Clamping voltage CL = V V V CL BR RM VVVVVV I Leakage current V = RM RM I RM V = Stand-off voltage RM I R I = Peak pulse current PP R Dynamic resistance Slope = 1/ R = d D I PP I = Breakdown current R Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6.9 7.3 7.8 V BR R I V = 6.3 V 300 nA RM RM I = 20 A 8/20s 11 PP V V CL I = 30 A 8/20s 12 PP R 8/20s 0.12 D C V = 0 V, F = 1 MHz, V = 30 mV 170 pF LINE LINE OSC DS12517 - Rev 3 page 2/11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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