ESDU401-1BF4 Datasheet 40 V single line ESD protection with ultra-low capacitance Features Ultra Low capacitance : 1 pF Bidirectional device High working voltage : 40 V Low leakage current : 50 nA max. 0201 package size compatible 2 Ultra small PCB area: 0.18 mm 0201 package Low clamping voltage: 105 V at 16 A I TLP pp Halogen free and RoHS compliant component Exceeds IEC 61000-4-2 level 4 standard: 16 kV (air discharge) 9.5 kV (contact discharge) Application Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablets and notebooks Portable multimedia devices and accessories Wearable, home automation, healthcare Highly integrated systems Product status link ESDU401-1BF4 Description The ESDU401-1BF4 is high voltage, ultra low capacitance bidirectional single line TVS diode designed to protect the data line or other I/O ports against ESD transients. The device is ideal for all applications where both reduced line capacitance and board space saving are required. DS13060 - Rev 1 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.ESDU401-1BF4 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 9.5 V pp Peak pulse voltage kV IEC 61000-4-2 air discharge 16 P Peak pulse power (8/20 s) 40 W pp I Peak pulse current (8/20 s) 0.7 A pp T Operating junction temperature range -55 to +150 j T Storage junction temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 L Figure 1. Electrical characteristics (definitions) I I PP Symbol Parameter V = Breakdown voltage at I BR R V Clamping voltage I CL = R V V V V I RM RM CL BR I Leakage current at V RM = RM I RM V V V RM BR CL V = Stand-off voltage RM I R I = Peak pulse current at VCL PP R Dynamic resistance = D Current for V measurement I = BR R IPP Input capacitance per line C = LINE Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit V I = 1 mA BR R 41 44 46 V I V = 40 V Leakage current 50 nA RM RM IEC 61000-4-2, 8 kV V Clamping voltage 105 V CL contact discharge measured after 30 ns V Clamping voltage 8/20 s waveform, I = 0.7 A 50 V CL PP R Dynamic resistance Pulse duration 100 ns 3.5 D C V = 40 V, F = 1 MHz, V = 30 mV LINE Line capacitance LINE OSC 1.1 1.3 pF DS13060 - Rev 1 page 2/10