ESDZV5HS-1BF4 STMicroelectronics

ESDZV5HS-1BF4 Datasheet Ultra-low clamping single line bidirectional ESD protection Features Ultra-low clamping voltage: 10 V (IEC 61000-4-2 contact discharge 8 kV at 30 ns / 16 A TLP) Bidirectional and symmetrical device High holding voltage for DC line protection 0201 WLCSP package Complies with the following standards: IEC 61000-4-2 level 4 0201 WLCSP package 15 kV (air discharge) 10 kV (contact discharge) ECOPACK 2 compliant component Application Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablet and notebooks Portable multimedia devices and accessories Wearable, home automation, healthcare Highly integrated systems Description Product status link ESDZV5HS-1BF4 The ESDZV5HS-1BF4 is a bidirectional single line TVS diode designed to protect the data line or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. DS12364 - Rev 3 - June 2018 www.st.com For further information contact your local STMicroelectronics sales office.ESDZV5HS-1BF4 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 10 V Peak pulse voltage kV pp IEC 61000-4-2 air discharge 15 P Peak pulse power (8/20 s) 40 W pp I Peak pulse current (8/20 s) 4 A pp T Operating junction temperature range -55 to +150 j T Storage junction temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 L Figure 1. Electrical characteristics (definitions) I Symbol Parameter R V Stand-off voltage D RM V Clamping voltage CL V Holding voltage V V V V H CL Trig BR RM V I Leakage current at V RM RM IRM I Peak pulse current PP V Triggering voltage Trig C Input capacitance per line I line R R Dynamic resistance D I PP Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit V 10 12 13.5 V trig V 6.5 7 V H I Leakage current V = 5.5 V 100 nA RM RM IEC 61000-4-2, 8 kV V Clamping voltage 10 V CL contact discharge measured after 30 ns R Dynamic resistance, pulse duration 100 ns 0.18 D C V = 0 V, F = 1 MHz, V = 30 mV Line capacitance 4 4.5 pF LINE LINE OSC DS12364 - Rev 3 page 2/10