FERD60H100C-Y Datasheet 100 V, 2 x 30 A field-effect rectifier diode A Features K A K AEC-Q101 qualified PPAP capable Operating T from -40 C to 175 C j K A ST patented rectifier process A Stable leakage current over reverse voltage DPAK Low forward voltage drop High frequency operation ECOPACK compliant Applications Battery charger DC / DC converter OBC (on-board battery charger) PHEV EV charging station Resonant LLC topology PFC functions (power factor correction) Description Product status link The FERD60H100C-Y is based on proprietary technology that achieves the best in FERD60H100C-Y class V /I trade-off for a given silicon surface. F R This 100 V automotive diode has been optimized for use in confined applications Product summary where both efficiency and thermal performance are key parameters. I 2 x 30 A F(AV) This device is suitable to be used in DCDC converter by improving the efficiency. V 100 V RRM T (max.) 175 C j V (typ.) 0.64 V F Product label DS13664 - Rev 2 - April 2021 www.st.com For further information contact your local STMicroelectronics sales office.FERD60H100C-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C , unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (T = -40 C to +175 C) 100 V RRM j I Forward rms current 60 A F(RMS) Per diode 30 I T = 145 C, = 0.5 Average forward current A F(AV) c Per device 60 I t = 10 ms sinusoidal Surge non repetitive forward current 290 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 2. Thermal resistance parameters Value Symbol Parameter Unit Typ. Max. Per diode 0.60 1.06 R Junction to case C/W th(j-c) Per device 0.30 0.53 For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Typ. Max. Unit T = 25 C 60 A j V = V R RRM (1) I Reverse leakage current T = 125 C 10 mA j R T = 125 C V = 70 V 5 mA j R T = 25 C 0.46 0.52 j I = 5 A F T = 125 C 0.41 0.45 j T = 25 C 0.62 0.70 j I = 15 A F T = 125 C 0.56 0.61 j (2) V Forward voltage drop V F T = 25 C 0.75 0.85 j I = 30 A F T = 125 C 0.64 0.70 j T = 25 C 0.92 j I = 60 A F T = 125 C 0.76 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p 2 To evaluate the conduction losses, use the following equation: P = 0.55 x I + 0.005 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS13664 - Rev 2 page 2/8