HCF4011B QUAD 2 INPUT NAND GATE PROPAGATION DELAY TIME t = 60ns (Typ.) at V = 10V PD DD BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO DIP SOP 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I = 100nA (MAX) AT V = 18V T = 25C ORDER CODES I DD A 100% TESTED FOR QUIESCENT CURRENT PACKAGE TUBE T & R MEETS ALL REQUIREMENTS OF JEDEC DIP HCF4011BEY JESD13B STANDARD SPECIFICATIONS SOP HCF4011BM1 HCF4011M013TR FOR DESCRIPTION OF B SERIES CMOS DEVICE DESCRIPTION implementation of the NAND function and The HCF4011B is a monolithic integrated circuit supplement the existing family of CMOS gates. All fabricated in Metal Oxide Semiconductor inputs and outputs are buffered. technology available in DIP and SOP packages. The HCF4011B QUAD 2 INPUT NAND GATE provides the system designer with direct PIN CONNECTION September 2001 1/7HCF4011B INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION PIN No SYMBOL NAME AND FUNCTION 1, 2, 5, 6, 8, A, B, C, D, E, Data Inputs 9, 12, 13 F, G, H 3, 4, 10, 11 J, K, L, M Data Outputs V 7 Negative Supply Voltage SS V 14 Positive Supply Voltage DD TRUTH TABLE INPUTS OUTPUTS A, C, E, G B, D, F, H J, K, L, M LL H LH H LOGIC DIAGRAM HL H HH L ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Supply Voltage -0.5 to +22 V DD V DC Input Voltage -0.5 to V + 0.5 V I DD I DC Input Current 10 mA I P Power Dissipation per Package 200 mW D Power Dissipation per Output Transistor 100 mW T Operating Temperature -55 to +125 C op T Storage Temperature -65 to +150 C stg Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. All voltage values are referred to V pin voltage. SS RECOMMENDED OPERATING CONDITIONS Symbol Parameter Value Unit V Supply Voltage 3 to 20 V DD V Input Voltage 0 to V V I DD T Operating Temperature -55 to 125 C op 2/7