MD1803DFP STMicroelectronics

MD1803DFP High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement Tight h range at operating collector current 3 FE 2 1 Fully insulated power package UL compliant TO-220FP Integrated free wheeling diode Applications Figure 1. Internal schematic diagram Horizontal deflection output for TV Description The MD1803DFP is manufactured using diffused collector in planar technology adopting new and R =60 typ. BE enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage. Table 1. Device summary Order code Marking Package Packing MD1803DFP MD1803DFP TO-220FP Tube May 2008 Rev 1 1/10 www.st.com 10Electrical ratings MD1803DFP 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1500 V CES BE V Collector-emitter voltage (I = 0) 700 V CEO B V Emitter-base voltage (I = 0) 10 V EBO C I Collector current 10 A C I Collector peak current (t < 5ms) 15 A CM P I Base current 5 A B P Total dissipation at T = 25C 40 W TOT c Insulation withstand voltage (rms) from all three leads to V 1500 V isol external heatsink T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 3.125 C/W thj-case 2/10