MD1803DFX STMicroelectronics

MD1803DFX High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation More stable performance versus operating temperature variation Low base drive requirement 3 Tighter h range at operating collector current FE 2 1 Fully insulated power package U.L. compliant Integrated free wheeling diode ISOWATT218FX In compliance with the 2002/93/EC european directive Applications Internal schematic diagram Horizontal deflection output for TV Description The MD1803DFX is manufactured using Diffused Collector in Planar Technology adopting new and R =60 typ. BE enhanced high voltage structure. The new MD product series show improved silicon efficiency bringing updated performance to the Horizontal Deflection stage. Order codes Part number Marking Package Packing MD1803DFX MD1803DFX ISOWATT218FX TUBE September 2006 Rev 6 1/10 www.st.com 10Electrical ratings MD1803DFX 1 Electrical ratings Table 1. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 1500 V CES BE V Collector-emitter voltage (I = 0) 700 V CEO B V Emitter-base voltage (I = 0) 10 V EBO C I Collector current 10 A C I Collector peak current (t < 5ms) 15 A CM P I Base current 5 A B P Total dissipation at T = 25C 57 W TOT c Insulation withstand voltage (rms) from all three leads to external V 2500 V isol heatsink T Storage temperature stg -65 to 150 C 150 T Max. operating junction temperature J Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case Max 2.2 C/W thj-case 2/10