Product Information

MJB44H11T4

MJB44H11T4 electronic component of STMicroelectronics

Datasheet
Transistors Switching - Resistor Biased 80V Low Voltage NPN 5V VEBO 10A IC 50W

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.3544 ea
Line Total: USD 708.8

0 - Global Stock
MOQ: 2000  Multiples: 0
Pack Size: 0
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

MJB44H11T4
STMicroelectronics

1 : USD 2.2289
10 : USD 1.7638
25 : USD 1.5507
100 : USD 1.412

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

MJB44H11T4
STMicroelectronics

1 : USD 1.2118
10 : USD 1.0834
100 : USD 0.8447
500 : USD 0.6985

0 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

MJB44H11T4
STMicroelectronics

1 : USD 1.2118
10 : USD 1.0834
100 : USD 0.8447
500 : USD 0.6985

0 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1000
Multiples : 1000

Stock Image

MJB44H11T4
STMicroelectronics

1000 : USD 0.5346

0 - WHS 5


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 2000
Multiples : 0

Stock Image

MJB44H11T4
STMicroelectronics

2000 : USD 0.3544

0 - WHS 6


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 12
Multiples : 1

Stock Image

MJB44H11T4
STMicroelectronics

12 : USD 1.7611
25 : USD 1.5448
100 : USD 1.4099

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
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MJB44H11T4 Low voltage NPN power transistor Datasheet - production data Features Low collector-emitter saturation voltage TAB Fast switching speed Applications 3 Power amplifier 1 Switching circuits 2 D PAK Description This device is an NPN transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance Figure 1. Internal schematic diagram coupled with very low saturation voltage. Table 1. Device summary Order codes Marking Package Packaging 2 MJB44H11T4 MJB44H11 D PAK Tape and reel May 2014 DocID022716 Rev 2 1/11 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Absolute maximum ratings MJB44H11T4 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (I = 0) 80 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 10 A C I Collector peak current 20 A CM P Total dissipation at T = 25 C 50 W TOT case Storage temperature -55 to 150 C TSTG Max. operating junction temperature 150 C TJ Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.5 C/W thJC R Thermal resistance junction-ambient max 62.5 C/W thJA 2/11 DocID022716 Rev 2 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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