X-On Electronics has gained recognition as a prominent supplier of MJB44H11T4 Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. MJB44H11T4 Bipolar Transistors - Pre-Biased are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

MJB44H11T4 STMicroelectronics

MJB44H11T4 electronic component of STMicroelectronics
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See Product Specifications
Part No. MJB44H11T4
Manufacturer: STMicroelectronics
Category: Bipolar Transistors - Pre-Biased
Description: Transistors Switching - Resistor Biased 80V Low Voltage NPN 5V VEBO 10A IC 50W
Datasheet: MJB44H11T4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2000: USD 0.3656 ea
Line Total: USD 731.2 
Availability - 0
MOQ: 2000  Multiples: 0
Pack Size: 0
Availability Price Quantity
0
Ship by Thu. 05 Sep to Wed. 11 Sep
MOQ : 1
Multiples : 1
1 : USD 2.2997
10 : USD 1.8198
25 : USD 1.5999
100 : USD 1.4568

0
Ship by Thu. 05 Sep to Wed. 11 Sep
MOQ : 1
Multiples : 1
1 : USD 1.2502
10 : USD 1.1178
100 : USD 0.8715
500 : USD 0.7207

0
Ship by Thu. 05 Sep to Wed. 11 Sep
MOQ : 1
Multiples : 1
1 : USD 1.2502
10 : USD 1.1178
100 : USD 0.8715
500 : USD 0.7207

0
Ship by Thu. 05 Sep to Wed. 11 Sep
MOQ : 1000
Multiples : 1000
1000 : USD 0.5516

0
Ship by Thu. 05 Sep to Wed. 11 Sep
MOQ : 2000
Multiples : 0
2000 : USD 0.3656

0
Ship by Thu. 05 Sep to Wed. 11 Sep
MOQ : 12
Multiples : 1
12 : USD 1.817
25 : USD 1.5938
100 : USD 1.4547

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Maximum Operating Temperature
Series
Packaging
Emitter- Base Voltage Vebo
Brand
Power Dissipation
Factory Pack Quantity :
LoadingGif
 
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We are delighted to provide the MJB44H11T4 from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MJB44H11T4 and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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MJB44H11T4 Low voltage NPN power transistor Datasheet - production data Features Low collector-emitter saturation voltage TAB Fast switching speed Applications 3 Power amplifier 1 Switching circuits 2 D PAK Description This device is an NPN transistor manufactured using new low voltage planar technology with double metal process. The result is a transistor which boasts exceptionally high gain performance Figure 1. Internal schematic diagram coupled with very low saturation voltage. Table 1. Device summary Order codes Marking Package Packaging 2 MJB44H11T4 MJB44H11 D PAK Tape and reel May 2014 DocID022716 Rev 2 1/11 This is information on a product in full production. www.st.com Obsolete Product(s) - Obsolete Product(s)Absolute maximum ratings MJB44H11T4 1 Absolute maximum ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (I = 0) 80 V CEO B V Emitter-base voltage (I = 0) 5 V EBO C I Collector current 10 A C I Collector peak current 20 A CM P Total dissipation at T = 25 C 50 W TOT case Storage temperature -55 to 150 C TSTG Max. operating junction temperature 150 C TJ Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 2.5 C/W thJC R Thermal resistance junction-ambient max 62.5 C/W thJA 2/11 DocID022716 Rev 2 Obsolete Product(s) - Obsolete Product(s)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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