P0102MN 5AA4 STMicroelectronics

P0102MN Sensitive 0.8 A SCR thyristor Datasheet - production data A Description Thanks to highly sensitive triggering levels, the 0.8 A P0102MN SCR thyristor is suitable for all G applications where available gate current is K limited. This device offers a high blocking voltage A of 600 V, ideal for applications like interrupters circuits. G A The surface mount SOT-223 package allows K compact, SMD based designs for automated SOT-223 manufacturing. Table 1: Device summary Symbol Value Unit Features I 0.8 A T(RMS) I 0.8 A T(RMS) VDRM/VRRM 600 V 125 C max Tj Low 0.2 mA gate current I 0.2 mA GT 600 V VDRM/VRRM Tj max. 125 C ECOPACK 2 compliant component Applications Proximity sensors Gate driver for large thyristors Overvoltage crowbar protection Ground fault circuit interrupters Arc fault circuit interrupter Standby mode power supplies Residual current detector October 2017 DocID031113 Rev 1 1/8 www.st.com This is information on a product in full production. Characteristics P0102MN 1 Characteristics Table 2: Absolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 conduction angle) 0.8 T = 70 C A amb I Average on-state current (180 conduction angle) 0.5 T(AV) tp = 8.3 ms 8 Non repetitive surge peak on-state current I A TSM (Tj initial = 25 C) t = 10 ms 7 p 2 2 2 I t I t value for fusing tp = 10 ms 0.24 A s Critical rate of rise of on-state current dl/dt f = 60 Hz Tj = 125 C 50 A/s I = 2 x I , t 100 ns G GT r VDRM/VRRM Repetitive peak off-state voltage Tj = 125 C 600 V I Peak gate current t = 20 s T = 125 C 1 A GM p j PG(AV) Average gate power dissipation Tj = 125 C 0.1 W T Storage junction temperature range -40 to +150 C stg Tj Operating junction temperature -40 to +125 C Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Symbol Test conditions Value Unit IGT Max. 200 A VD = 12 V, RL = 140 V Max. 0.8 V GT VGD VD = VDRM, RL = 3.3 k, RGK = 1000 Tj = 125 C Min. 0.1 V V I = 10 A Min. 8 V RG RG IH IT = 50 mA, RGK = 1000 Max. 5 mA I I = 1 mA, R = 1000 Max. 6 mA L G GK dV/dt VD = 67 % VDRM, RGK = 1000 Tj = 125 C Min. 75 V/s Table 4: Static characteristics Symbol Test conditions Value Unit V I = 1.6 A, t = 380 s T = 25 C Max. 1.95 TM TM p j V VTO Threshold voltage Tj = 125 C Max. 0.95 R Dynamic resistance T = 125 C Max. 600 m D j Tj = 25 C 10 I /I V = V V = V , R = 1000 Max. A DRM RRM D DRM R RRM GK T = 125 C 100 j Table 5: Thermal parameters Symbol Parameter Value Unit R Junction to tab (DC) 30 th(j-t) C/W (1) S = 5 cm Rth(j-a) Junction to ambient (DC) 60 Notes: (1) S = copper surface under tab. 2/8 DocID031113 Rev 1