SPV1001N30 STMicroelectronics

SPV1001N Cool bypass switch for photovoltaic applications Features Anodo SPV1001N30 I =12.5 A, V =30 V F R SPV1001N40 I =12.5 A, V =40 V F R Very low forward voltage drop Very low reverse leakage current Catodo 150 C operating junction temperature PQFN 5 x 6 mm Applications Photovoltaic panels Description The SPV1001N is a system-in-package solution for photovoltaic applications to perform cool bypass rectification similar to that of a conventional Schottky diode but with much lower forward voltage drop and reverse leakage current. The device consists of a power MOSFET transistor which charges a capacitor during the OFF time, and drives its gate during the ON time using the charge previously stored in the capacitor. The ON and OFF times are set to reduce the average voltage drop across the drain and source terminals, resulting in reduced power dissipation. Table 1. Device summary Order codes Package Packaging SPV1001N30 PQFN 5 x 6 mm Tape and reel SPV1001N40 November 2011 Doc ID 018938 Rev 2 1/9 www.st.com 9Maximum ratings SPV1001N 1 Maximum ratings 1.1 Absolute maximum ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit SPV1001N30 SPV1001N40 V Max DC reverse voltage 30 40 V R I Max forward current 12.5 12.5 A F Non repetitive peak surge (half-wave, single I 250 250 A FSM phase 50-60 Hz) ESD level Human body level 8 k 8 k V 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit T Junction temperature operating range -40 to 150 -40 to 150 C J T Storage temperature range -40 to 150 -40 to 150 C STG R Thermal resistance, junction-to-case 4 4 C/W thJC 2/9 Doc ID 018938 Rev 2