X-On Electronics has gained recognition as a prominent supplier of BAL74E6327HTSA1 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. BAL74E6327HTSA1 Diodes - General Purpose, Power, Switching are a product manufactured by Infineon. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

BAL74E6327HTSA1 Infineon

BAL74E6327HTSA1 electronic component of Infineon
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See Product Specifications
Part No.BAL74E6327HTSA1
Manufacturer: Infineon
Category: Diodes - General Purpose, Power, Switching
Description: Diode: switching; SMD; 50V; 0.25A; 4ns; Package: Reel, tape; SOT23
Datasheet: BAL74E6327HTSA1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1893 ea
Line Total: USD 0.19 
Availability - 39257
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
303
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2449
10 : USD 0.2152
100 : USD 0.1124
1000 : USD 0.0639
3000 : USD 0.0544
9000 : USD 0.0482

39257
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1893
10 : USD 0.1683
100 : USD 0.0884
1000 : USD 0.0519
3000 : USD 0.0463
9000 : USD 0.0393
45000 : USD 0.0309
99000 : USD 0.0295

113490
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 39000
Multiples : 39000
39000 : USD 0.0433

303
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 194
Multiples : 1
194 : USD 0.1124
1000 : USD 0.0639
3000 : USD 0.0544
9000 : USD 0.0482

   
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Packaging
Pd - Power Dissipation
Features Of Semiconductor Devices
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We are delighted to provide the BAL74E6327HTSA1 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BAL74E6327HTSA1 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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BAL74/BAR74... Silicon Switching Diode For high-speed switching applications 1) Pb-free (RoHS compliant) package Qualified according AEC Q101 BAL74 BAR74 Type Package Configuration Marking BAL74 SOT23 single JCs BAR74 SOT23 single JBs Maximum Ratings at T = 25C, unless otherwise specified A Parameter Symbol Value Unit 50 V Diode reverse voltage V R 50 Peak reverse voltage V RM 250 mA Forward current I F Peak forward current I - FM Surge forward current, t = 1 s I 4.5 A FS Non-repetitive peak surge forward current I - FSM 370 mW Total power dissipation P tot T 54C S 150 C Junction temperature T j Storage temperature T -65 ... 150 stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point , BAL74, BAR74 R 260 thJS 1 Pb-containing package may be available upon special request 2 For calculation of R please refer to Application Note Thermal Resistance thJA 1 2007-04-19BAL74/BAR74... Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 50 - - V Breakdown voltage V (BR) I = 100 A (BR) Reverse current I A R V = 50 V - - 0.1 R V = 50 V, T = 150 C - - 100 R A - - 1 V Forward voltage V F I = 100 mA F AC Characteristics Diode capacitance C - - 2 pF T V = 0 V, f = 1 MHz R Reverse recovery time t - - 4 ns rr I = 10 mA, I = 10 mA, measured at I = 1mA, F R R R = 100 L Test circuit for reverse recovery time D.U.T. Pulse generator: t = 100ns, D = 0.05, p t = 0.6ns, R = 50 r i Oscillograph F Oscillograph: R = 50 , t = 0.35ns, r C 1pF EHN00015 2 2007-04-19

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