ST13003N STMicroelectronics

ST13003N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Application 3 2 Compact fluorescent lamps (CFLs) 1 SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure 1. Internal schematic diagram cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging ST13003N13003NSOT-32BAG February 2010 Doc ID 15759 Rev 2 1/9 www.st.com 9 Electrical ratings ST13003N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Collector-base voltage (I = 0) 9 V EBO C I Collector current 1 A C I Collector peak current (t < 5 ms) 2 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1 A BM P P Total dissipation at T = 25 C 20 W TOT c T Storage temperature -55 to 150 STG C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 6.25 C/W thJC 2/9 Doc ID 15759 Rev 2