Product Information

ST13003N

ST13003N electronic component of STMicroelectronics

Datasheet
Bipolar (BJT) Transistor NPN 400 V 1 A 20 W Through Hole SOT-32-3
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5963 ea
Line Total: USD 1.6

939 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

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939 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

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ST13003N
STMicroelectronics

1 : USD 1.5963

939 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 5
Multiples : 1

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ST13003N
STMicroelectronics

5 : USD 1.6289

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RoHS - XON
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Additional Infomation About Product

ST13003N High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Application 3 2 Compact fluorescent lamps (CFLs) 1 SOT-32 Description The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a Figure 1. Internal schematic diagram cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Table 1. Device summary Order code Marking Package Packaging ST13003N13003NSOT-32BAG February 2010 Doc ID 15759 Rev 2 1/9 www.st.com 9 Electrical ratings ST13003N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0) 700 V CES BE V Collector-emitter voltage (I = 0) 400 V CEO B V Collector-base voltage (I = 0) 9 V EBO C I Collector current 1 A C I Collector peak current (t < 5 ms) 2 A CM P I Base current 0.5 A B I Base peak current (t < 5 ms) 1 A BM P P Total dissipation at T = 25 C 20 W TOT c T Storage temperature -55 to 150 STG C T Max. operating junction temperature 150 J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 6.25 C/W thJC 2/9 Doc ID 15759 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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