X-On Electronics has gained recognition as a prominent supplier of STN1NF20 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STN1NF20 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STN1NF20 STMicroelectronics

Name: STN1NF20
Brand: STMicroelectronics
SKU: STN1NF20_STMicroelectronics
Availability: InStock
Rating: 5 (11 reviews)

STN1NF20 electronic component of STMicroelectronics

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Part No.	STN1NF20
Manufacturer:	STMicroelectronics
Category:	MOSFETs
Description:	MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II
Datasheet:	STN1NF20 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

4000: USD 0.3134 ea
Line Total: USD 1253.6

Availability - 11640
Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ: 4000 Multiples: 4000
Pack Size: 4000

STN1NF20 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

11640

Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ : 4000
Multiples : 4000

4000 : USD 0.3134
8000 : USD 0.2837
12000 : USD 0.2807

52

Ship by Thu. 13 Mar to Tue. 18 Mar

MOQ : 1
Multiples : 1

1 : USD 0.8327
10 : USD 0.8133
30 : USD 0.6866
100 : USD 0.6086

11640

Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ : 4000
Multiples : 4000

4000 : USD 0.3134
8000 : USD 0.2837
12000 : USD 0.2807

7760

Ship by Thu. 06 Mar to Wed. 12 Mar

MOQ : 4000
Multiples : 4000

4000 : USD 0.3274
8000 : USD 0.2963
12000 : USD 0.2932

Specifications

Manufacturer

STMicroelectronics STMicroelectronics

Product Category

MOSFETs MOSFETs

RoHS - XON

Y Y

Id - Continuous Drain Current

1 A 1 A

Vds - Drain-Source Breakdown Voltage

200 V 200 V

Rds On - Drain-Source Resistance

1.5 Ohms 1.5 Ohms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

2 V 2 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

2 W 2 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 223 SOT - 223

Packaging

Reel Reel

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

5.7 nC 5.7 nC

Channel Mode

Enhancement Enhancement

Tradename

Stripfet Stripfet

Configuration

Single Single

Series

Stn1nf20 Stn1nf20

Brand

Stmicroelectronics Stmicroelectronics

Continuous Drain Current

1 A 1 A

Drain-Source Breakdown Voltage

200 V 200 V

Power Dissipation

2 W 2 W

Rds On

1.5 Ohms 1.5 Ohms

Fall Time

12.4 ns 12.4 ns

Gate Charge Qg

5.7 nC 5.7 nC

Rise Time

5.6 ns 5.6 ns

Factory Pack Quantity :

4000 4000

Transistor Type

1 N - Channel Power Mosfet 1 N - Channel Power Mosfet

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85423102 85423102

Product Type

Mosfet Mosfet

Subcategory

Mosfets Mosfets

Taric

8542319000 8542319000

Notes:- Show Stocked Products With Similar Attributes.

STN1NF20 Alternative Parts

We are delighted to provide the STN1NF20 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STN1NF20 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

STN1NF20 N-channel 200 V, 1.1 , 1 A SOT-223 STripFET II Power MOSFET Features Order code V R max I DSS DS(on) D STN1NF20 200 V < 1.5 1 A 4 100% avalanche tested 3 Low gate charge 2 1 Exceptional dv/dt capability SOT-223 Applications Switching applications Description This Power MOSFET has been developed using Figure 1. Internal schematic diagram STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 3 - V Table 1. Device summary Order code Marking Package Packaging STN1NF20 1NF20 SOT-223 Tape and reel November 2011 Doc ID 022321 Rev 1 1/12 www.st.com 12Contents STN1NF20 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 022321 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
11640 Ship by Thu. 06 Mar to Wed. 12 Mar MOQ : 4000 Multiples : 4000	4000 : USD 0.3134 8000 : USD 0.2837 12000 : USD 0.2807

52 Ship by Thu. 13 Mar to Tue. 18 Mar MOQ : 1 Multiples : 1	1 : USD 0.8327 10 : USD 0.8133 30 : USD 0.6866 100 : USD 0.6086

11640 Ship by Thu. 06 Mar to Wed. 12 Mar MOQ : 4000 Multiples : 4000	4000 : USD 0.3134 8000 : USD 0.2837 12000 : USD 0.2807

7760 Ship by Thu. 06 Mar to Wed. 12 Mar MOQ : 4000 Multiples : 4000	4000 : USD 0.3274 8000 : USD 0.2963 12000 : USD 0.2932

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