Product Information

STN1NF20

STN1NF20 electronic component of STMicroelectronics

Datasheet
MOSFET N-Channel 1.1 Ohm 200V 1A STripFET II

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

417: USD 0.2907 ea
Line Total: USD 121.22

190120 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 417  Multiples: 1
Pack Size: 1
Availability Price Quantity
3880 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 4000

Stock Image

STN1NF20
STMicroelectronics

4000 : USD 0.319
8000 : USD 0.319

190120 - WHS 2


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 417
Multiples : 1

Stock Image

STN1NF20
STMicroelectronics

417 : USD 0.2907

1 - WHS 3


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STN1NF20
STMicroelectronics

1 : USD 0.8783
10 : USD 0.7313
30 : USD 0.6588
100 : USD 0.5862
500 : USD 0.5299
1000 : USD 0.5076

3880 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 4000

Stock Image

STN1NF20
STMicroelectronics

4000 : USD 0.319

3880 - WHS 5


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 4000
Multiples : 4000

Stock Image

STN1NF20
STMicroelectronics

4000 : USD 0.2938

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STN1NF20 N-channel 200 V, 1.1 , 1 A SOT-223 STripFET II Power MOSFET Features Order code V R max I DSS DS(on) D STN1NF20 200 V < 1.5 1 A 4 100% avalanche tested 3 Low gate charge 2 1 Exceptional dv/dt capability SOT-223 Applications Switching applications Description This Power MOSFET has been developed using Figure 1. Internal schematic diagram STMicroelectronics unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. 3 - V Table 1. Device summary Order code Marking Package Packaging STN1NF20 1NF20 SOT-223 Tape and reel November 2011 Doc ID 022321 Rev 1 1/12 www.st.com 12Contents STN1NF20 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 022321 Rev 1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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