STPS1045B STMicroelectronics

STPS1045B Power Schottky rectifier Datasheet production data Description High voltage Schottky rectifier suited for switch mode power supply and other power converters. Packaged in DPAK, this device is intended for use . in high frequency circuitries where low switching losses is required . Table 1. Device summary Symbol Value I 10 A F(AV) V 45 V RRM T 175 C j . 3 V 0.50 V F(typ) Features Very small conduction losses Extremely fast switching Low thermal resistance Negligible switching losses Low forward voltage drop Low capacitance Avalanche specification ECOPACK 2 compliant component for DPAK on demand October 2016 DocID6085 Rev 9 1/8 This is information on a product in full production. www.st.com 8Characteristics STPS1045B 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C unless otherwise stated) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I / pin Forward rms current 7 A F(RMS) Average forward current, I T = 150 C 10 A F(AV) c 0.5, square wave I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p P Repetitive peak avalanche power t = 10 s, T = 125 C 285 W ARM p j T Storage temperature range -65 to +175 C stg (1) T Maximum operating junction temperature 175 C j 1 dPtot < 1. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Max. value Unit R Junction to case 3 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C -100 A j (1) I Reverse leakage current V = V R R RRM T = 125 C - 7 15 mA j T = 25 C -0.63 j I = 10 A F T = 125 C - 0.50 0.57 j (2) V Forward voltage drop V F T = 25 C -0.84 j I = 20 A F T = 125 C - 0.65 0.72 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.42 x I + 0.015 x I F(AV) F (RMS) 2/8 DocID6085 Rev 9