STPS1545DY STMicroelectronics

STPS1545-Y Automotive power Schottky rectifier Datasheet - production data Description . Single chip Schottky rectifier suited for switch mode power supply and high frequency DC to DC . converters. Packaged in TO-220AC, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection in automotive applications. Table 1. Device summary Symbol Value . I 15 A F(AV) 2 & 7 V 45 V RRM T(max) 175 C j Features V (typ) 0.50 V F Very small conduction losses Negligible switching losses Extremely fast switching Avalanche capability specified AECQ-101 qualified ECOPACK 2 compliant component May 2016 DocID023750 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics STPS1545-Y 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 45 V RRM I Forward rms current 30 A F(RMS) I Average forward current = 0.5 T = 155 C 15 A F(AV) c I Surge non repetitive forward current t = 10 ms sinusoidal 220 A FSM p t = 2 s square p I Peak repetitive reverse current 1A RRM F = 1 kHz I Non repetitive peak reverse current t = 100 s square 3 A RSM p (1) P Repetitive peak avalanche power T = 125 C, t = 10 s 400 W ARM j p T Storage temperature range -65 to + 175 C stg (2) T Operating junction temperature -40 to + 175 C j dV/dt Critical rate of rise of reverse voltage 10000 V/s 1. For pulse time duration deratings, please refer to Figure 3. More details regarding the avalanche energy measurements and diode validation in the avalanche are provided in the STMicroelectronics Application notes AN1768, Admissible avalanche power of Schottky diodes and AN2025, Converter improvement using Schottky rectifier avalanche specification. dPtot 1 --------------- -------------------------- 2. condition to avoid thermal runaway for a diode on its own heatsink dTj Rthj a Table 3. Thermal resistances Symbol Parameter Value Unit R Junction to case 1.6 C/W th(j-c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - - 200 A j (1) I Reverse leakage current V =V R R RRM T = 125 C - 11 40 mA j T = 125C I = 15A - 0.5 0.57 j F (1) V Forward voltage drop T = 25C I = 30 A -- 0.84 V F j F T = 125 C I = 30 A - 0.65 0.72 j F 1. Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.42 x I + 0.01 I F(AV) F (RMS) 2/8 DocID023750 Rev 2