STPS20L25CT STMicroelectronics

STPS20L25CT/CG LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I 2x10A F(AV) A1 V 25 V K RRM Tj (max) 150 C A2 V (max) 0.35 V F FEATURES AND BENEFITS K n VERY LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION AND REDUCED HEATSINK A2 n OPTIMIZED CONDUCTION/REVERSE LOSSES A2 K A1 TRADE-OFF WHICH MEANS THE HIGHEST A1 EFFICIENCY IN THE APPLICATIONS n AVALANCHE CAPABILITY SPECIFIED 2 TO-220AB D PAK STPS20L25CT STPS20L25CG DESCRIPTION Dual center tap Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. 2 Packaged in TO-220AB and D PAK, this device is especially intended for use as a rectifier at the secondary of 3.3V SMPS units. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 25 V RRM I RMS forward current 30 A F(RMS) I Average forward current Tc = 145C Per diode 10 A F(AV) = 0.5 Per device 20 I Surge non repetitive forward current tp = 10 ms Sinusoidal 220 A FSM I Repetitive peak reverse current tp=2 s square F=1kHz 1 A RRM I Non repetitive peak reverse current tp = 100 s square 3 A RSM P Repetitive peak avalanche power tp = 1s Tj = 25C 5300 W ARM T Storage temperature range - 65 to + 150 C stg Tj Maximum operating junction temperature * 150 C dV/dt Critical rate of rise of reverse voltage 10000 V/s dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed : 4A 1/5STPS20L25CT/CG THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to case Per diode 1.5 C/W th (j-c) Total 0.8 R 0.1 th (c) Coupling When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Tests conditions Tests conditions Min. Typ. Max. Unit I * Reverse leakage current Tj = 25CV =V 800 A R R RRM Tj = 125C 125 250 mA V * Forward voltage drop Tj = 25CI = 10 A 0.46 V F F Tj = 125CI = 10 A 0.30 0.35 F Tj=25CI = 20 A 0.56 F Tj = 125CI = 20 A 0.41 0.48 F Pulse test: * tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=0.22xI + 0.013 I F(AV) F (RMS) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward current versus ambient average forward current. temperature ( = 0.5). PF(av)(W) IF(av)(A) 12 5 = 0.1 = 0.2 = 0.5 Rth(j-a)=Rth(j-c) = 0.05 10 4 8 3 = 1 Rth(j-a)=50C/W 6 2 4 T T 1 2 Tamb(C) =tp/T tp IF(av) (A) =tp/T tp 0 0 0 25 50 75 100 125 150 01 23456789 10 11 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(ARMtp) P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j tp(s) 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/5